Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering
暂无分享,去创建一个
[1] R. Reif,et al. Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality , 2000, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.
[2] S. Muensit,et al. Extensional piezoelectric coefficients of gallium nitride and aluminum nitride , 1999 .
[3] Judith A. Ruffner,et al. Effect of substrate composition on the piezoelectric response of reactively sputtered AlN thin films , 1999 .
[4] Paul Muralt,et al. Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications , 1999 .
[5] P. Muralt,et al. Aluminum nitride thin films for high frequency applications , 1999 .
[6] Jai-Young Lee,et al. Effect of negative bias voltage on the microstructures of AlN thin films fabricated by reactive r.f. magnetron sputtering , 1997 .
[7] L. J. Pilione,et al. Development of preferred orientation in polycrystalline AlN thin films deposited by rf sputtering system at low temperature , 1997 .
[8] D. Vanderbilt,et al. Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997, cond-mat/9705105.
[9] K. Kusaka,et al. Effect of nitrogen gas pressure on residual stress in A1N films deposited by the planar magnetron sputtering system , 1996 .
[10] Nava Setter,et al. Interferometric measurements of electric field-induced displacements in piezoelectric thin films , 1996 .
[11] H. Okano,et al. Epitaxial AlN Thin Films Grown on α-Al2O3 Substrates by ECR Dual Ion Beam Sputtering , 1995 .
[12] R. Vispute,et al. High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition , 1995 .
[13] R. Davis,et al. Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy , 1993 .
[14] R. L. Peterson,et al. Aluminum nitride thin film sensor for force, acceleration, and acoustic emission sensing , 1993 .
[15] G. Eesley,et al. Measurement of intrinsic stresses during growth of aluminum nitride thin films by reactive sputter deposition , 1993 .
[16] G. Eesley,et al. Real time stress measurements and elastic constant of aluminum nitride thin films on Si(111) , 1993 .
[17] Peter Gauer,et al. Investigation of thin AIN films for piezolayer-field effect transistor applications , 1993 .
[18] H. Okano,et al. Preparation of c-Axis Oriented AlN Thin Films by Low-Temperature Reactive Sputtering , 1992 .
[19] R. Messier,et al. Stress dependence of reactively sputtered aluminum nitride thin films on sputtering parameters , 1989 .
[20] K. Tsubouchi,et al. Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films , 1985, IEEE Transactions on Sonics and Ultrasonics.
[21] Russell Messier,et al. Revised structure zone model for thin film physical structure , 1984 .