Growth of CdTexSe1-x from a Te-rich solution for applications in radiation detection

A1. Characterization A1. Defects A1. Te-inclusions A2. THM B2. CdTeSe B2. Semiconducting II-VI materials abstract We grew CdTexSe1� x (CTS) crystals from a Te-rich solution by using the traveling heater method (THM). The average size distribution and concentration of Te inclusions/precipitates in these as-grown samples were measured to be � 7 � 10 4 cm � 3 , which is much lower than values typical for the present state-of- the-art commercial CdZnTe (CZT) material. Their low-temperature photoluminescence measurement indicates high quality of the material; however the resistivity obtained via I-V curve measurements was � 5 � 10 8 Ω-cm, which is low in comparison to that required for gamma detectors. A well-resolved alpha response peak can be detected for both planar- and hemispherical detector geometry. The (μτ)e value for our as-grown sample at room temperature was found to be � 4 � 10 � 3 cm 2 /V.