Morphology and motion of the interface between amorphous and crystalline cobalt disilicide
暂无分享，去创建一个
[1] C. Bulle-lieuwma,et al. Microstructure of heteroepitaxial Si/CoSi2/Si formed by Co implantation into (100) and (111) Si , 1989 .
[2] A. Cros,et al. Low-temperature amorphous-to-crystalline transformation of CoSi2 films , 1988 .
[3] R. Dynes,et al. Mesotaxy: single-crystal growth of buried CoSi2 layers , 1987 .
[4] King-Ning Tu,et al. Temperature dependence of structural and electrical properties of Ta‐Si thin alloy films , 1983 .
[5] T. M. Polchovskaya. Crystal growth: a tutorial approach edited by W. Bardsley, D. T. J. Hurle and J. B. Mullin , 1981 .
[6] M. Scott. The crystallization kinetics of Fe-Ni based metallic glasses , 1978 .
[7] A. Christou,et al. Silicide formation and interdiffusion effects in Si-Ta, SiO2-Ta AND Si-PtSi-Ta thin film structures , 1976 .
[8] W. L Winterbottom,et al. Equilibrium shape of a small particle in contact with a foreign substrate , 1967 .
[9] M. Avrami. Granulation, Phase Change, and Microstructure Kinetics of Phase Change. III , 1941 .
[10] M. Avrami. Kinetics of Phase Change. II Transformation‐Time Relations for Random Distribution of Nuclei , 1940 .
[11] M. Avrami. Kinetics of Phase Change. I General Theory , 1939 .
[12] K. Tu,et al. Crystallization, resistivity and microstructure of co-deposited metal-silicon thin film alloys , 1987 .