EMI characterization of a GaN switched-capacitor based partial power RF SEPIC

This paper investigates the EMI characteristics of a GaN switched-capacitor based partial power RF SEPIC, which is one of the preferred candidates to achieve a high power density, high efficiency design. The main noise source and noise coupling paths for both common mode and differential mode EMI are identified and verified by experiments. The impacts of ON/OFF control schemes are also evaluated.

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