New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes

We present a detailed analysis of Off-state Time Dependent Dielectric Breakdown (TDDB) under non-uniform field performed in MOSFET devices from 28nm FDSOI, 65nm SOI to 130nm nodes. Oxide breakdown in thin gate oxide is characterized under DC stress with different gate-length LG and as function of drain voltage VDS and temperature. We show that the leakage current is a better monitor for TDDB dependence under Off-mode stress whereas a new modeling is proposed. It is found that Weibull slopes β are higher in PFET due to large amount of injected hot electrons than in NFET when hot holes are involved.

[1]  X. Federspiel,et al.  Modeling hot carrier damage interaction between on and off modes for 28 nm AC RF applications , 2021, Microelectronics Reliability.

[2]  T. Cabout,et al.  Hot-carrier evaluation of a zero-cost transistor developed via process optimization in an embedded non-volatile memory CMOS technology , 2021, Microelectronics Reliability.

[3]  Tanya Nigam,et al.  Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area , 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

[4]  X. Federspiel,et al.  Analysis of the interactions of HCD under “On” and “Off” state modes for 28nm FDSOI AC RF modelling , 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

[5]  X. Federspiel,et al.  Hot-Carrier degradation in P- and N-channel EDMOS for smart power application , 2020 .

[6]  C. Kim,et al.  Low-Frequency Noise Characteristics Under the OFF-State Stress , 2020, IEEE Transactions on Electron Devices.

[7]  Edith Kussener,et al.  Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS , 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

[8]  G. Ghibaudo,et al.  Temperature dependence of TDDB at high frequency in 28FDSOI , 2019, Microelectronics Reliability.

[9]  Donghee Son,et al.  Comprehensive Study for OFF-State Hot Carrier Degrdation of Scaled nMOSFETs in DRAM , 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

[10]  G. Ghibaudo,et al.  New Insights on device level TDDB at GHz speed in advanced CMOS nodes , 2019, 2018 International Integrated Reliability Workshop (IIRW).

[11]  A. Cros,et al.  FDSOI Mosfet gate dielectric breakdown Vd dependancy , 2018, 2018 International Integrated Reliability Workshop (IIRW).

[12]  J. D. del Alamo,et al.  Excess Off-State Current in InGaAs FinFETs , 2018, IEEE Electron Device Letters.

[13]  S. F. Yap,et al.  Fast TDDB monitoring for BEOL interconnect dielectrics , 2017, International Integrated Reliability Workshop.

[14]  Stephanie Thalberg,et al.  Fundamentals Of Modern Vlsi Devices , 2016 .

[15]  Robert Weigel,et al.  Impact of DC and RF non-conducting stress on nMOS reliability , 2015, 2015 IEEE International Reliability Physics Symposium.

[16]  D. Varghese,et al.  Energy driven modeling of OFF-state and sub-threshold degradation in scaled NMOS transistors , 2014, 2014 IEEE International Reliability Physics Symposium.

[17]  S. Slesazeck,et al.  Dynamic off-state TDDB of ultra short channel HKMG nFETS and its implications on CMOS logic reliability , 2014, 2014 IEEE International Reliability Physics Symposium.

[18]  X. Federspiel,et al.  Experimental characterization of the interactions between HCI, off-state and BTI degradation modes , 2011, 2011 IEEE International Integrated Reliability Workshop Final Report.

[19]  J. M. Park,et al.  Physics-Based Hot-Carrier Degradation Models , 2011 .

[20]  V. Huard,et al.  Off state incorporation into the 3 energy mode device lifetime modeling for advanced 40nm CMOS node , 2010, 2010 IEEE International Reliability Physics Symposium.

[21]  M.A. Alam,et al.  Charge Pumping as a Monitor of off-State TDDB in Asymmetrically Stressed Transistors , 2009, IEEE Electron Device Letters.

[22]  Vincent Huard,et al.  General framework about defect creation at the Si∕SiO2 interface , 2009 .

[23]  D. Varghese,et al.  A comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failure , 2008, 2008 IEEE International Reliability Physics Symposium.

[24]  M.A. Alam,et al.  Multi-probe Two-Dimensional Mapping of Off-State Degradation in DeNMOS Transistors: How and Why Interface Damage Predicts Gate Dielectric Breakdown , 2007, 2007 IEEE International Electron Devices Meeting.

[25]  H. Shichijo,et al.  off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown , 2007, IEEE Transactions on Electron Devices.

[26]  S.E. Rauch,et al.  The energy-driven paradigm of NMOSFET hot-carrier effects , 2005, IEEE Transactions on Device and Materials Reliability.

[27]  V. Huard,et al.  On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[28]  R. Degraeve,et al.  Hot hole degradation effects in lateral nDMOS transistors , 2004, IEEE Transactions on Electron Devices.

[29]  E. Nowak,et al.  Off-state mode TDDB reliability for ultra-thin gate oxides: New methodology and the impact of oxide thickness scaling , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

[30]  Jordi Suñé,et al.  On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress conditions , 2002 .

[31]  Luca Selmi,et al.  On interface and oxide degradation in VLSI MOSFETs. I. Deuterium effect in CHE stress regime , 2002 .

[32]  J. Sune,et al.  New physics-based analytic approach to the thin-oxide breakdown statistics , 2001, IEEE Electron Device Letters.

[33]  R. K. Smith,et al.  Monte Carlo simulation of the CHISEL flash memory cell , 2000 .

[34]  Guido Groeseneken,et al.  Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction , 1999 .

[35]  P.J. Silverman,et al.  Explanation of stress-induced damage in thin oxides , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[36]  A. Adan,et al.  The OFF-State Leakage Current in Ultra-Thin SOI MOSFET's , 1998 .

[37]  Guido Groeseneken,et al.  A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides , 1995, Proceedings of International Electron Devices Meeting.

[38]  Yuan Taur,et al.  Defect generation in 3.5 nm silicon dioxide films , 1994 .