SOI Global-Shutter Sample-and-Hold Circuit for Image Sensors compared to Bulk CMOS and nMOS

This work addresses supporting circuits of CMOS pixel sensors, namely the Sample-and-Hold and the line amplifier, focusing on global-shutter architecture. The study was carried out considering three different technologies: CMOS, nMOS and SOI-CMOS, aiming to compare and analyze the best option among these technologies. Results of numerical circuit simulations were used to evaluate important parameters such as linearity, stabilization time of the output signal, input range limits and harmonic distortion. The obtained results showed that SOI CMOS presents better linearity, wider operating range and lower power consumption.