Photoinduced effects and metastability in amorphous semiconductors and insulators

Amorphous semiconductors, being intrinsically metastable in nature, exhibit a wide variety of changes in their physical properties, particularly when photoinduced using bandgap illumination. This article reviews the photoinduced phenomena exhibited by amorphous semiconductors such as amorphous hydrogenated silicon (and other tetrahedrally coordinated materials) and chalcogenide glasses. Features exhibited in common by all types of amorphous semiconductors, whether in the experimentally observed photoinduced metastability or the theoretical models used to account for such behaviour, are stressed.

[1]  D. Weaire Optical properties of solids — new developments: Edited by B. O. Seraphin North Holland (Amsterdam and New York) 1976, pp viii + 1018, $111.95 , 1976 .

[2]  S. Elliott A theory of a.c. conduction in chalcogenide glasses , 1977 .

[3]  I. Jánossy,et al.  OPTICAL BISTABILITY OBSERVED IN AMORPHOUS SEMICONDUCTOR FILMS , 1983 .

[4]  Adler,et al.  Structure and electronic states in disordered systems. , 1986, Physical review letters.

[5]  F. Mollot,et al.  Radiative recombination in amorphous As2Se3 , 1973 .

[6]  M. Kumeda,et al.  Dependence of the photoluminescence fatigue on the illumination temperature for a-Si :H , 1987 .

[7]  K. Shimakawa,et al.  Electronic transport in organic amorphous polysilanes , 1989 .

[8]  J. Robertson,et al.  Theory of defects in vitreous silicon dioxide , 1983 .

[9]  D. Biegelsen,et al.  Optically induced electron spin resonance in doped amorphous silicon , 1977 .

[10]  H. Fritzsche,et al.  Metastable defect states and equilibration temperatures in a-SiNx:H, a-SiOx:H and a-SiCx:H , 1991 .

[11]  E. Davis,et al.  On the absence of photodarkening in pnictide amorphous semiconductors , 1980 .

[12]  Arun Madan,et al.  The Physics and Applications of Amorphous Semiconductors , 1988 .

[13]  B. Wilson,et al.  Time-resolved photoluminescence in a-Si:H: Sub-band-gap excitation , 1982 .

[14]  D. Krick,et al.  Evidence for a negative electron‐electron correlation energy in the dominant deep trapping center in silicon nitride films , 1990 .

[15]  E. N. Economou,et al.  Exponential Band Tails in Random Systems , 1984 .

[16]  D. Redfield Critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’’ [Appl. Phys. Lett. 45, 1075 (1984)] , 1989 .

[17]  D. Krick,et al.  Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study , 1988 .

[18]  M. Abkowitz,et al.  Electronic transport in glassy Si-backbone polymers , 1987 .

[19]  Katsuhisa Tanaka,et al.  Giant photoexpansion in As2S3 glass , 1994 .

[20]  Itoh,et al.  Threshold energy for photogeneration of self-trapped excitons in SiO2. , 1989, Physical review. B, Condensed matter.

[21]  Keiji Tanaka,et al.  Anomaly of the thickness dependence of photodarkening in amorphous chalcogenide films , 1984 .

[22]  Tsai,et al.  Mechanism of intrinsic Si E'-center photogeneration in high-purity silica. , 1988, Physical review letters.

[23]  A. Stoneham,et al.  Small polarons in real crystals: concepts and problems , 1993 .

[24]  M. F. Kotkata,et al.  An X-ray study of As−Se−Te compounds , 1983 .

[25]  Y. Hamakawa,et al.  Amorphous silicon technology , 1988 .

[26]  A. Paton,et al.  The crystal and molecular structure of tetrameric arsenic selenide, As4Se4 , 1974 .

[27]  G. Roland Concerning the alpha -AsS realgar inversion , 1972 .

[28]  Mikkelsen,et al.  X-ray creation and activation of electron spin resonance in vitreous silica. , 1993, Physical review. B, Condensed matter.

[29]  S. Elliott,et al.  Reversible electron‐beam writing on a submicron scale in a superionic amorphous film , 1993 .

[30]  Yang,et al.  Measurement of local structural configurations associated with reversible photostructural changes in arsenic trisulfide films. , 1987, Physical review. B, Condensed matter.

[31]  D. Adler Density of States in the Gap of Tetrahedrally Bonded Amorphous Semiconductors , 1978 .

[32]  K. Shimakawa,et al.  ac transport in amorphous silicon‐nitrogen alloys , 1992 .

[33]  P. Apai,et al.  Investigation of laser induced light absorption oscillation , 1980 .

[34]  G. Kordas,et al.  Paramagnetic conduction electrons in GeSx-glasses , 1985 .

[35]  Tatsuo Shimizu,et al.  Photoinduced ESR in amorphous silicon alloyed with various amounts of nitrogen , 1993 .

[36]  R. Street,et al.  Photoluminescence in amorphous As2S3 , 1973 .

[37]  S. Yamasaki,et al.  Pulsed-ESR study of light-induced metastable defect in a-Si:H , 1993 .

[38]  Tatsuo Shimizu,et al.  ESR Studies on the Light-Induced Effect in Si-Based Amorphous Semiconductors , 1985 .

[39]  S. Tsuda,et al.  Trapping and Recombination of Photogenerated Carriers in As-Grown High-Temperature-Annealed and Light-Soaked a-Si:H , 1993 .

[40]  Tanaka,et al.  Origin of optically induced electron-spin resonance in hydrogenated amorphous silicon. , 1990, Physical review letters.

[41]  D. Redfield,et al.  Reinterpretation of degradation kinetics of amorphous silicon , 1989 .

[42]  Meaudre Influence of illumination during annealing of quenched defects in undoped amorphous silicon. , 1992, Physical review. B, Condensed matter.

[43]  A. Masuda,et al.  Relationship between Photodarkening and Light-Induced ESR in Amorphous Ge-S Films Alloyed with Lead , 1991 .

[44]  K. Shiraishi,et al.  Photocreated metastable state in organopolysilanes , 1993 .

[45]  J. Stuchlík,et al.  Deep states in a-Si:H- changes with light soaking and applied stress , 1987 .

[46]  J. Stuke,et al.  Light‐induced dangling bonds in hydrogenated amorphous silicon , 1981 .

[47]  Tatsuo Shimizu,et al.  Photo-Induced ESR in Amorphous Si1-xNx:H Films , 1984 .

[48]  H. R. Philipp,et al.  Optical properties of non-crystalline Si, SiO, SiOx and SiO2 , 1971 .

[49]  W. L. Warren,et al.  Defects in amorphous hydrogenated silicon nitride films , 1993 .

[50]  Robert A. Street,et al.  Thermally induced effects in evaporated chalcogenide films. II. Optical absorption , 1978 .

[51]  A. Kolobov,et al.  On the mechanism of photostructural changes in As-based vitreous chalcogenides microscopic, dynamic and electronic aspects , 1994 .

[52]  E. Eser Light‐induced degradation and thermal recovery of the photoconductivity in hydrogenated amorphous silicon films , 1986 .

[53]  K. Shimakawa,et al.  Fatigue effect in luminescence of glow discharge amorphous silicon at low temperatures , 1980 .

[54]  S. Nitta,et al.  New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon , 1980 .

[55]  M. B. Myers,et al.  Structural characterizations of vitreous inorganic polymers by thermal studies , 1967 .

[56]  M. Paesler,et al.  Identification of IRO structures in photodarkening: A high pressure study of As2S3 , 1989 .

[57]  W. R. Salaneck,et al.  Electric field dependent photodecomposition of a-As2Se3 , 1973 .

[58]  S. A. Dembovsky,et al.  Glassy state clarified through chemical bonds and their defects , 1986 .

[59]  K. Tanaka Evidence for reversible photostructural change in local order of amorphous As2S3 film , 1974 .

[60]  S. Wagner,et al.  Temperature and intensity dependence of the saturated density of light‐induced defects in hydrogenated amorphous silicon , 1992 .

[61]  A. J. Lowe,et al.  The electronic properties of plasma‐deposited films of hydrogenated amorphous SiNx (0 , 1986 .

[62]  Devine Defect creation and two-photon absorption in amorphous SiO2. , 1989, Physical review letters.

[63]  P. Anderson Absence of Diffusion in Certain Random Lattices , 1958 .

[64]  Nakamura,et al.  Generation mechanism of photoinduced paramagnetic centers from preexisting precursors in high-purity silicas. , 1990, Physical review. B, Condensed matter.

[65]  K. Shimakawa,et al.  Photoinduced metastable defects in amorphous semiconductors : communality between hydrogenated amorphous silicon and chalcogenides , 1993 .

[66]  T. Ohsuna,et al.  Isolating individual chains of selenium by incorporation into the channels of a zeolite , 1987, Nature.

[67]  R. Martin,et al.  Intermolecular bonding and lattice dynamics of Se and Te , 1976 .

[68]  I. Jánossy,et al.  Kinetics of optical reorientation in amorphous GeSe2, films , 1991 .

[69]  R. Street,et al.  States in the Gap in Glassy Semiconductors , 1975 .

[70]  John Robertson,et al.  ELECTRONIC-STRUCTURE OF SILICON-NITRIDE , 1991 .

[71]  P. Klein,et al.  Photostructural effects in glassy As2Se3 and As2S3 , 1980 .

[72]  A. J. Lowe,et al.  Extended X-ray absorption fine-structure spectroscopy study of photostructural changes in amorphous arsenic chalcogenides , 1986 .

[73]  S. Hudgens,et al.  Annealing behavior of light‐induced defects in hydrogenated amorphous silicon alloys , 1984 .

[74]  R. Street,et al.  Luminescence and ESR studies of defects in hydrogenated amorphous silicon , 1980 .

[75]  Elliott,et al.  Origin of photoinduced metastable defects in amorphous chalcogenides. , 1992, Physical review. B, Condensed matter.

[76]  A. Ward,et al.  Lattice Vibrations and Interlayer Interactions in CrystallineAs2S3andAs2Se3 , 1971 .

[77]  A. Masuda,et al.  Light-induced ESR and disappearance of photodarkening in amorphous Ge-S films alloyed with lead , 1991 .

[78]  Nelson,et al.  Light-enhanced deep deuterium emission and the diffusion mechanism in amorphous silicon. , 1993, Physical review. B, Condensed matter.

[79]  W. Känzig Electron Spin Resonance ofV1-Centers , 1955 .

[80]  S. Keneman Hologram Storage in Arsenic Trisulfide Thin Films , 1971 .

[81]  A. V. K. And,et al.  Effect of conductive substrate on dissolution and lateral diffusion of metals in vitreous chalcogenides , 1991 .

[82]  F. Mollot,et al.  Study of localized states in amorphous semiconductor chalcogenides by radiative recombination , 1974 .

[83]  G. Zentai,et al.  Light-induced transmittance oscillation in GeSe2 thin films , 1977 .

[84]  A. Boonstra,et al.  REVERSIBLE DANGLING-BOND GENERATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS , 1987 .

[85]  D. Adler,et al.  Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors , 1976 .

[86]  H. Fritzsche,et al.  Photo-induced creation of metastable defects in a-Si: H at low temperatures and their effect on the photoconductivity , 1994 .

[87]  A. R. Long Frequency-dependent loss in amorphous semiconductors , 1982 .

[88]  H. Fritzsche,et al.  Light-induced metastable changes in amorphous silicon nitride , 1994 .

[89]  P. J. Gaczi As and S centred paramagnetic species in sulphide glasses , 1982 .

[90]  J. C. Phillips Bonds and Bands in Semiconductors , 1970, Science.

[91]  I. Hirabayashi,et al.  Light induced metastable effect on the short lived photoinduced midgap absorption in hydrogenated amorphous silicon , 1983 .

[92]  B. Seraphin Optical Properties of Solids: New Developments , 1976 .

[93]  Photodarkening of amorphous selenium , 1985 .

[94]  K. L. Chopra,et al.  Photo-optical changes in Ge-chalcogenide films , 1982 .

[95]  M. Paesler,et al.  Modeling the structure and photostructural changes in amorphous arsenic sulfide , 1991 .

[96]  R. Street,et al.  THERMAL EQUILIBRIUM EFFECTS IN DOPED HYDROGENATED AMORPHOUS SILICON , 1989 .

[97]  Chuang‐Chuang Tsai,et al.  Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon , 1984 .

[98]  Taylor Pc,et al.  Absence of photodarkening in bulk, glassy As2S , 1987 .

[99]  J. Harbison,et al.  Radiative recombination at dangling bonds in a-Si:H , 1984 .

[100]  N. Mott,et al.  Electronic Processes In Non-Crystalline Materials , 1940 .

[101]  T. Tada,et al.  Photoluminescence from optically induced metastable states in a-As2S3 , 1989 .

[102]  S. Nitta,et al.  Nitrogen-related defects and their role in the photo-induced phenomena in a-Si1−xNx:H , 1985 .

[103]  M. Klinger Glassy disordered systems: Topology, atomic dynamics and localized electron states , 1988 .

[104]  E. Friebele,et al.  Radiation-Induced Optical Absorption in Amorphous Silicas Prepared by Different Techniques , 1987 .

[105]  A. R. Long,et al.  Optically induced frequency-dependent loss in hydrogenated amorphous silicon , 1988 .

[106]  A. R. Long,et al.  Frequency dependent loss in glow discharge amorphous silicon , 1987 .

[107]  R. Schropp,et al.  Instability mechanism in hydrogenated amorphous silicon thin‐film transistors , 1987 .

[108]  Takeshi Tanaka,et al.  Creation of Quasistable Lattice Defects by Electronic Excitation in SiO2 , 1983 .

[109]  Michael A. Paesler,et al.  Reversible photodarkening of amorphous arsenic chalcogens , 1991 .

[110]  Kuroda,et al.  1H electron-nuclear-double-resonance-detected ESR of light-soaked undoped a-Si:H. , 1987, Physical review. B, Condensed matter.

[111]  Warren,et al.  First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride. , 1990, Physical review letters.

[112]  Elliott,et al.  Model for bond-breaking mechanisms in amorphous arsenic chalcogenides leading to light-induced electron-spin resonance. , 1990, Physical review. B, Condensed matter.

[113]  H. Naito,et al.  Transient photoconductivity studies of the UV light soaked state of amorphous organic polysilanes , 1991 .

[114]  Edwards Theory of the self-trapped hole in a-SiO2. , 1993, Physical review letters.

[115]  F. Yonezawa,et al.  Dispersive model for the creation and annealing processes of light-induced defects in a-Si:H , 1993 .

[116]  Yoshiro Suzuki,et al.  Photo-induced absorption chance in a-AS2S3 films at 80K , 1987 .

[117]  S. Kato,et al.  Hydrogen dilution effects on properties of ECR plasma deposited a-Ge:H , 1989 .

[118]  Taylor,et al.  Optically induced electron-spin resonance in AsxS , 1988, Physical review. B, Condensed matter.

[119]  A. Kolobov,et al.  Polarized photodoping of As2S3 films by silver , 1992 .

[120]  S. Doherty,et al.  ODMR of recombination centres in crystalline quartz , 1984 .

[121]  M. Yao,et al.  Photo-Induced Phenomena in Isolated Selenium Chains , 1989 .

[122]  Suzuki,et al.  Luminescence and defect formation in undensified and densified amorphous SiO2. , 1990, Physical review. B, Condensed matter.

[123]  K. Shimakawa On the temperature dependence of a.c. conduction in chalcogenide glasses , 1982 .

[124]  Hellmut Fritzsche,et al.  Amorphous silicon and related materials , 1989 .

[125]  A. Kolobov,et al.  The Urbach rule in the configuration-coordinate model of amorphous semiconductors , 1979 .

[126]  W. Spear The study of transport and related properties of amorphous silicon by transient experiments , 1983 .

[127]  Santos,et al.  Trap-limited hydrogen diffusion in a-Si:H. , 1992, Physical review. B, Condensed matter.

[128]  V. Malinovsky,et al.  Local heating and photostructure transformations in chalcogenide vitreous semiconductors , 1982 .

[129]  S. Kurita,et al.  Influence of Ag Photodoping on Photoinduced Changes in As2S3 Glass Films , 1983 .

[130]  C. H. Seager,et al.  Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films , 1991 .

[131]  H. Ticha,et al.  Photoinduced changes of optical properties of amorphous chalcogenide films at ambient air pressure , 1987 .

[132]  I. Chambouleyron,et al.  Light-induced metastability in a-Ge" H , 1991 .

[133]  K. Morigaki Chapter 4 Optically Detected Magnetic Resonance , 1984 .

[134]  K. Murayama Time-resolved photoluminescence in chalcogenide glasses , 1983 .

[135]  Tsai Te,et al.  Experimental evidence for excitonic mechanism of defect generation in high-purity silica. , 1991 .

[136]  Anatoly N. Trukhin,et al.  Excitons in SiO2: a review , 1992 .

[137]  H. Fritzsche,et al.  The origin of reversible and irreversible photostructural changes in chalcogenide glasses , 1993 .

[138]  Marshall,et al.  Metastable defects in amorphous-silicon thin-film transistors. , 1986, Physical review letters.

[139]  A. Watanabe,et al.  Frequency-dependent transport in glow-discharge amorphous silicon , 1986 .

[140]  Y. Mizushima,et al.  Photostructural change of lattice‐vibrational spectra in Se‐Ge chalcogenide glass , 1978 .

[141]  Brandt,et al.  Pulsed-light soaking of hydrogenated amorphous silicon. , 1994, Physical review. B, Condensed matter.

[142]  H. Hamanaka,et al.  Reversible photostructural change in melt-quenched GeS2 glass , 1977 .

[143]  H. Namikawa,et al.  ESR in GeS glasses , 1973 .

[144]  Jackson,et al.  Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen. , 1987, Physical review. B, Condensed matter.

[145]  Jerzy Kanicki,et al.  Electron Spin Resonance Spectroscopy Of Defects In Low Temperature Dielectric Films , 1988, Other Conferences.

[146]  E. Friebele,et al.  Fundamental defect centers in glass : The peroxy radical in irradiated high-purity fused silica , 1979 .

[147]  R. M. Lambert,et al.  Surface science lettersNovel photoinduced surface oxidation of an amorphous semiconductor: An XPS study of vitreous arsenic sulphide , 1989 .

[148]  Stefanovich,et al.  Models of the self-trapped exciton and nearest-neighbor defect pair in SiO2. , 1990, Physical review. B, Condensed matter.

[149]  A model for ac conduction in amorphous silicon nitrides , 1990 .

[150]  M. A. Bösch,et al.  Hot photoluminescence in amorphous As 2 S 3 , 1982 .

[151]  B. Averbach,et al.  Crystalline structures of As2Se3 and As4Se4 , 1973 .

[152]  M. Frumar,et al.  ESR study and model of paramagnetic defects in GeS glasses , 1979 .

[153]  S. Yamasaki,et al.  Dependence of effective electron-electron correlation energies of defects on average coordination number in chalcogenide glasses☆ , 1989 .

[154]  R. Street,et al.  States in the gap and recombination in amorphous semiconductors , 1975 .

[155]  K. Sakaguchi,et al.  AC conduction in glow-discharge amorphous silicon films☆ , 1977 .

[156]  A. Kolobov,et al.  Thermal and optical bleaching in darkened films of chalcogenide vitreous semiconductors , 1980 .

[157]  R. West The polysilane high polymers , 1986 .

[158]  M. Kastner,et al.  Excitation-Energy Dependence of Photoluminescence Bandwidth in a - As 2 S 3 : Observation of the Mobility Gap? , 1981 .

[159]  Graeme Maxwell,et al.  UV written 13 dB reflection filters in hydrogenated low loss planar silica waveguides , 1993 .

[160]  Elliott,et al.  Photoinduced changes of ac transport in amorphous As2S , 1987, Physical review. B, Condensed matter.

[161]  D. Vanderbilt,et al.  Theory of defect states in glassy selenium , 1980 .

[162]  J. Ristein,et al.  Microscopic structure of the radiative centre in As2Se3 crystals , 1988 .

[163]  Carlos Frederico de Oliveira Graeff,et al.  Light‐induced annealing of metastable defects in hydrogenated amorphous silicon , 1993 .

[164]  M. Z. Butt,et al.  Anomalous yielding in alloys at low temperatures , 1986 .

[165]  I. Hirabayashi,et al.  Temperature dependence of photoluminescence spectra and model of self-trapping of holes in a-Si:H , 1993 .

[166]  A. R. Long,et al.  Frequency-dependent loss in sandwich samples of hydrogenated amorphous silicon , 1987 .

[167]  M. Brodsky,et al.  Electron spin resonance of ultrahigh vacuum evaporated amorphous silicon: In situ and ex situ studies , 1978 .

[168]  Novel photoinduced surface oxidation of an amorphous semiconductor: An XPS study of vitreous arsenic sulphide , 1989 .

[169]  A. Kolobov,et al.  A model of photostructural changes in chalcogenide vitreous semiconductors: 1. Theoretical considerations , 1981 .

[170]  Patrick M. Lenahan,et al.  First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride , 1990 .

[171]  E. Friebele,et al.  Oxygen-associated trapped-hole centers in high-purity fused silicas , 1979 .

[172]  W. Fuhs,et al.  Non-equilibrium carriers in a-Si:H excited by defect absorption , 1993 .

[173]  Elliott,et al.  Metastable optical anisotropy in chalcogenide glasses induced by unpolarized light. , 1994, Physical review. B, Condensed matter.

[174]  Keiji Tanaka Relations between dynamical and reversible photoinduced changes , 1980 .

[175]  Andraka,et al.  Observation of non-Fermi-liquid behavior in U0.2Y0.8Pd3. , 1991, Physical review letters.

[176]  S. Agarwal Nature of Localized States in Amorphous Semiconductors—A Study by Electron Spin Resonance , 1973 .

[177]  N. Amer,et al.  The contribution of the staebler-wronski effect to gap-state absorption in hydrogenated amorphous silicon , 1983 .

[178]  Tatsuo Shimizu Tatsuo Shimizu,et al.  Light Soaking of a-Si:H at 77 K , 1993 .

[179]  Tatsuo Shimizu,et al.  Photo-created defects in a-Si:H as elucidated by ESR, LESR and CPM , 1989 .

[180]  V. K. Tikhomirov,et al.  Photodarkening and photoinduced anisotropy in chalcogenide vitreous semiconductor films , 1989 .

[181]  V. Tikhomirov,et al.  Photoinduced anisotropic phenomena in chalcogenide glasses : light-scattering and spectral selectivity , 1994 .

[182]  A. Masuda,et al.  Correlation between a.c. transport and electron spin resonance in amorphous Ge-S films alloyed with lead , 1994 .

[183]  Alexander L. Shluger,et al.  Self-trapped excitons and interstitial-vacancy pairs in oxides , 1991 .

[184]  Crandall Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect. , 1991, Physical review. B, Condensed matter.

[185]  Weber,et al.  Hydrogen diffusion in a-Si:H stimulated by intense illumination. , 1994, Physical review. B, Condensed matter.

[186]  Kurtz,et al.  Photocarrier generation and transport in sigma -bonded polysilanes. , 1987, Physical review. B, Condensed matter.

[187]  W. Fowler,et al.  Oxygen vacancy model for the E1′ center in SiO2 , 1974 .

[188]  Keiji Tanaka,et al.  Configuration-coordinate model for photodarkening in amorphous As2S3 , 1981 .

[189]  Yoshihiko Mizushima,et al.  A new inorganic electron resist of high contrast , 1977 .

[190]  H. Naito,et al.  Light-induced states in a-As2Se3: comparison with a-Si:H , 1993 .

[191]  Michael Thorpe,et al.  Rigidity percolation in glassy structures , 1985 .

[192]  M. Kastner,et al.  Evidence for the neutrality of luminescence centres in chalcogenide glasses , 1978 .

[193]  M. Koós,et al.  Fatigue and low temperature self-recovery of photoluminescence in a-Si: H , 1988 .

[194]  Greene,et al.  Primary relaxation processes at the band edge of SiO2. , 1993, Physical review letters.

[195]  C. Ong,et al.  Stability of a self-trapping hole in alpha -quartz , 1994 .

[196]  A. Watanabe,et al.  a.c. Conduction originated from the atomic two-levels systems in hydrogenated amorphous silicon , 1985 .

[197]  John Robertson,et al.  Gap states in silicon nitride , 1984 .

[198]  J. Morniroli,et al.  Crystalline defects in M7C3 carbides , 1983 .

[199]  Stanford R. Ovshinsky,et al.  Photostructural transformations in amorphous As2Se3 and As2S3 films , 1974 .

[200]  J. Pankove,et al.  Light‐induced radiative recombination centers in hydrogenated amorphous silicon , 1980 .

[201]  Y. Hsia,et al.  Empirical study of the metal‐nitride‐oxide‐semiconductor device characteristics deduced from a microscopic model of memory traps , 1982 .

[202]  M. Yoshida,et al.  Gap states in hydrogenated amorphous silicon The origins of the light-induced ESR and the low-energy luminescence , 1985 .

[203]  Santos,et al.  Light-enhanced hydrogen motion in a-Si:H. , 1991, Physical review letters.

[204]  A. Owen,et al.  Reversible photodarkening and structural changes in As2S3 thin films , 1984 .

[205]  H. Oheda Discontinuous change of photoluminescence lifetime with temperature in hydrogenated amorphous silicon , 1993 .

[206]  A. Firth,et al.  Explanation of the laser-induced oscillatory phenomenon in amorphous semiconductor films , 1983 .

[207]  Y. Shinozuka Reconsideration of Electron-lattice Interaction in Amorphous Semiconductors , 1993 .

[208]  A. V. Kolobov,et al.  Photoelectron spectroscopic investigation of photostructural transformations in glassy chalcogenide semiconductor films , 1991 .

[209]  S. Elliott,et al.  Photostructural changes in amorphous As50Se50 films : an EXAFS study , 1990 .

[210]  Mitsunori Mori,et al.  Monte Carlo simulation of dispersive transient transport in percolation clusters , 1992 .

[211]  J. Kanicki,et al.  Photobleaching of light‐induced paramagnetic defects in amorphous silicon nitride films , 1990 .

[212]  P. W. Wang,et al.  Some effects of 5 eV photons on defects in SiO2 , 1992 .

[213]  Daxing Han,et al.  Light-induced metastable defects in a-Si:H as elucidated by optically detected magnetic resonance measurements at 2K , 1987 .

[214]  R. Street,et al.  Accelerated hydrogen migration under steady-state and pulsed illumination in a-Si:H , 1993 .

[215]  J. Marshall,et al.  Electronic, optoelectronic, and magnetic thin films : proceedings of the Eighth International School on Condensed Matter Physics, Varna, Bulgaria, 18th-23rd September 1994 , 1995 .

[216]  S. Elliott,et al.  Photostructural changes in bulk chalcogenide glasses: An EXAFS study , 1988 .

[217]  Y. Toyozawa,et al.  Interband Absorption Spectra of Disordered Semiconductors in the Coherent Potential Approximation , 1981 .

[218]  Santos,et al.  Hydrogen migration and electronic carriers in a-Si:H. , 1993, Physical review. B, Condensed matter.

[219]  James H. Stathis,et al.  Photoinduced Paramagnetic Defects in Amorphous Silicon Dioxide , 1984 .

[220]  R. Street Luminescence in amorphous semiconductors , 1976 .

[221]  A. Kolobov,et al.  Photodoping of amorphous chalcogenides by metals , 1991 .

[222]  Y. Nannichi,et al.  Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon , 1982 .

[223]  S. Rosenwaks,et al.  Anisotropy of photoinduced light-scattering in glassy As2S3 , 1993 .

[224]  Structure of the self-trapped exciton in quartz. , 1990 .

[225]  Elliott,et al.  Reversible photoinduced change of ac conduction in amorphous As2S3 films. , 1988, Physical review. B, Condensed matter.

[226]  C. Spence,et al.  The mechanism of giant photo-contraction in obliquely-deposited thin films of amorphous germanium chalcogenides , 1987 .

[227]  C. T. Kirk Valence alternation pair model of charge storage in MNOS memory devices , 1979 .

[228]  Tsai,et al.  Thermal-equilibrium processes in amorphous silicon. , 1987, Physical review. B, Condensed matter.

[229]  B. Kolomiets,et al.  Reversible photoinduced changes in the properties of chalcogenide vitreous semiconductors , 1978 .

[230]  W. Hayes,et al.  Charge-trapping properties of germanium in crystalline quartz , 1986 .

[231]  Silver,et al.  Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects. , 1990, Physical review. B, Condensed matter.

[232]  D. Carlson,et al.  AMORPHOUS SILICON SOLAR CELL , 1976 .

[233]  S. Yamasaki,et al.  The Isolated Se Chains in the Channels of Mordenite Crystal , 1986 .

[234]  Warren,et al.  Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride. , 1990, Physical review. B, Condensed matter.

[235]  Jackson,et al.  Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon. , 1987, Physical review letters.

[236]  M. Stutzmann,et al.  Kinetics of light-induced defect creation in amorphous silicon: The constant degradation method , 1991 .

[237]  B. T. Kolomiets,et al.  Photoinduced Optical Anisotropy in Chalcogenide Vitreous Semiconducting Films , 1979, April 16.

[238]  H. Tsutsu,et al.  Photodarkening in glassy As2S3 under pressure , 1984 .

[239]  R. Fischer,et al.  Photoluminescence in amorphous silicon , 1977 .

[240]  H. Naito,et al.  Photo-induced phenomena in transport properties of a-As2Se3 , 1987 .

[241]  K. Takeda,et al.  The presence of different kinds of dangling bonds and their light-induced creation in a-Si:H , 1993 .

[242]  Robert A. Street,et al.  Photoinduced Defects in Chalcogenide Glasses , 1980 .

[243]  B. Cavenett,et al.  Exciton and Pair Recombination at Intimate Valence-Alternation Pairs ina-As2S3 , 1982 .

[244]  Elliott,et al.  Reversible photoinduced change of photoconductivity in amorphous chalcogenide films. , 1990, Physical review. B, Condensed matter.

[245]  S. Nonomura,et al.  AC conduction of the heavily doped glow discharge amorphous silicon films , 1980 .

[246]  S. W. Ing,et al.  Photodecomposition of Amorphous As2Se3 and As2S3 , 1971 .

[247]  R. A. Weeks,et al.  Paramagnetic Resonance of Lattice Defects in Irradiated Quartz , 1956 .

[248]  A. Shluger The model of a triplet self-trapped exciton in crystalline SiO2 , 1988 .

[249]  R. Street,et al.  Defects in bombarded amorphous silicon , 1979 .