Photoinduced effects and metastability in amorphous semiconductors and insulators
暂无分享,去创建一个
[1] A. Kondo,et al. Microscopic Mechanisms of Light-Induced Metastable Defects in a-Si:H , 1995 .
[2] Katsuhisa Tanaka,et al. Giant photoexpansion in As2S3 glass , 1994 .
[3] A. Masuda,et al. Correlation between a.c. transport and electron spin resonance in amorphous Ge-S films alloyed with lead , 1994 .
[4] Weber,et al. Hydrogen diffusion in a-Si:H stimulated by intense illumination. , 1994, Physical review. B, Condensed matter.
[5] Brandt,et al. Pulsed-light soaking of hydrogenated amorphous silicon. , 1994, Physical review. B, Condensed matter.
[6] C. Ong,et al. Stability of a self-trapping hole in alpha -quartz , 1994 .
[7] Elliott,et al. Metastable optical anisotropy in chalcogenide glasses induced by unpolarized light. , 1994, Physical review. B, Condensed matter.
[8] V. Tikhomirov,et al. Photoinduced anisotropic phenomena in chalcogenide glasses : light-scattering and spectral selectivity , 1994 .
[9] H. Fritzsche,et al. Light-induced metastable changes in amorphous silicon nitride , 1994 .
[10] K. Shiraishi,et al. Photocreated metastable state in organopolysilanes , 1993 .
[11] I. Hirabayashi,et al. Temperature dependence of photoluminescence spectra and model of self-trapping of holes in a-Si:H , 1993 .
[12] F. Yonezawa,et al. Dispersive model for the creation and annealing processes of light-induced defects in a-Si:H , 1993 .
[13] S. Maruno,et al. Mechanism of photosurface deposition , 1993 .
[14] H. Naito,et al. Light-induced states in a-As2Se3: comparison with a-Si:H , 1993 .
[15] K. Takeda,et al. The presence of different kinds of dangling bonds and their light-induced creation in a-Si:H , 1993 .
[16] H. Oheda. Discontinuous change of photoluminescence lifetime with temperature in hydrogenated amorphous silicon , 1993 .
[17] S. Rosenwaks,et al. Anisotropy of photoinduced light-scattering in glassy As2S3 , 1993 .
[18] K. Shimakawa,et al. Photoinduced metastable defects in amorphous semiconductors : communality between hydrogenated amorphous silicon and chalcogenides , 1993 .
[19] S. Yamasaki,et al. Pulsed-ESR study of light-induced metastable defect in a-Si:H , 1993 .
[20] Y. Shinozuka. Reconsideration of Electron-lattice Interaction in Amorphous Semiconductors , 1993 .
[21] W. Fuhs,et al. Non-equilibrium carriers in a-Si:H excited by defect absorption , 1993 .
[22] W. L. Warren,et al. Defects in amorphous hydrogenated silicon nitride films , 1993 .
[23] Tatsuo Shimizu,et al. Photoinduced ESR in amorphous silicon alloyed with various amounts of nitrogen , 1993 .
[24] R. Street,et al. Accelerated hydrogen migration under steady-state and pulsed illumination in a-Si:H , 1993 .
[25] Edwards. Theory of the self-trapped hole in a-SiO2. , 1993, Physical review letters.
[26] H. Fritzsche,et al. The origin of reversible and irreversible photostructural changes in chalcogenide glasses , 1993 .
[27] S. Elliott,et al. Reversible electron‐beam writing on a submicron scale in a superionic amorphous film , 1993 .
[28] S. Tsuda,et al. Trapping and Recombination of Photogenerated Carriers in As-Grown High-Temperature-Annealed and Light-Soaked a-Si:H , 1993 .
[29] Greene,et al. Primary relaxation processes at the band edge of SiO2. , 1993, Physical review letters.
[30] Carlos Frederico de Oliveira Graeff,et al. Light‐induced annealing of metastable defects in hydrogenated amorphous silicon , 1993 .
[31] A. Stoneham,et al. Small polarons in real crystals: concepts and problems , 1993 .
[32] Santos,et al. Hydrogen migration and electronic carriers in a-Si:H. , 1993, Physical review. B, Condensed matter.
[33] Mikkelsen,et al. X-ray creation and activation of electron spin resonance in vitreous silica. , 1993, Physical review. B, Condensed matter.
[34] Dyre. Universal ac conductivity of nonmetallic disordered solids at low temperatures. , 1993, Physical review. B, Condensed matter.
[35] Tatsuo Shimizu Tatsuo Shimizu,et al. Light Soaking of a-Si:H at 77 K , 1993 .
[36] Nelson,et al. Light-enhanced deep deuterium emission and the diffusion mechanism in amorphous silicon. , 1993, Physical review. B, Condensed matter.
[37] Graeme Maxwell,et al. UV written 13 dB reflection filters in hydrogenated low loss planar silica waveguides , 1993 .
[38] Aoki,et al. dc and ac photoconductivities in hydrogenated amorphous germanium. , 1992, Physical review. B, Condensed matter.
[39] A. Kolobov,et al. Athermal photo-amorphization of As50Se50 films , 1992 .
[40] Elliott,et al. Origin of photoinduced metastable defects in amorphous chalcogenides. , 1992, Physical review. B, Condensed matter.
[41] P. W. Wang,et al. Some effects of 5 eV photons on defects in SiO2 , 1992 .
[42] Anatoly N. Trukhin,et al. Excitons in SiO2: a review , 1992 .
[43] K. Shimakawa,et al. ac transport in amorphous silicon‐nitrogen alloys , 1992 .
[44] Santos,et al. Trap-limited hydrogen diffusion in a-Si:H. , 1992, Physical review. B, Condensed matter.
[45] Meaudre. Influence of illumination during annealing of quenched defects in undoped amorphous silicon. , 1992, Physical review. B, Condensed matter.
[46] S. Wagner,et al. Temperature and intensity dependence of the saturated density of light‐induced defects in hydrogenated amorphous silicon , 1992 .
[47] Mitsunori Mori,et al. Monte Carlo simulation of dispersive transient transport in percolation clusters , 1992 .
[48] Suzuki,et al. Resonance Raman scattering of the self-trapped exciton in alkali halides. , 1992, Physical review letters.
[49] Huang,et al. Kinetics of optically generated defects in hydrogenated amorphous silicon. , 1991, Physical review. B, Condensed matter.
[50] Santos,et al. Light-enhanced hydrogen motion in a-Si:H. , 1991, Physical review letters.
[51] Andraka,et al. Observation of non-Fermi-liquid behavior in U0.2Y0.8Pd3. , 1991, Physical review letters.
[52] Tsai Te,et al. Experimental evidence for excitonic mechanism of defect generation in high-purity silica. , 1991 .
[53] Brandt,et al. Fast metastable defect-creation in amorphous silicon by femtosecond light pulses. , 1991, Physical review letters.
[54] I. Jánossy,et al. Kinetics of optical reorientation in amorphous GeSe2, films , 1991 .
[55] A. Kolobov,et al. Photodoping of amorphous chalcogenides by metals , 1991 .
[56] A. V. K. And,et al. Effect of conductive substrate on dissolution and lateral diffusion of metals in vitreous chalcogenides , 1991 .
[57] Michael A. Paesler,et al. Reversible photodarkening of amorphous arsenic chalcogens , 1991 .
[58] A. Masuda,et al. Relationship between Photodarkening and Light-Induced ESR in Amorphous Ge-S Films Alloyed with Lead , 1991 .
[59] I. Chambouleyron,et al. Light-induced metastability in a-Ge" H , 1991 .
[60] Alexander L. Shluger,et al. Self-trapped excitons and interstitial-vacancy pairs in oxides , 1991 .
[61] Crandall. Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect. , 1991, Physical review. B, Condensed matter.
[62] Keiji Tanaka,et al. Photodoping in the Ag/As─S system induced by pulsed light , 1991 .
[63] Elliott,et al. Reversible photoinduced change of photoconductivity in amorphous chalcogenide films. , 1990, Physical review. B, Condensed matter.
[64] Elliott,et al. Model for bond-breaking mechanisms in amorphous arsenic chalcogenides leading to light-induced electron-spin resonance. , 1990, Physical review. B, Condensed matter.
[65] Stefanovich,et al. Models of the self-trapped exciton and nearest-neighbor defect pair in SiO2. , 1990, Physical review. B, Condensed matter.
[66] J. Kanicki,et al. Photobleaching of light‐induced paramagnetic defects in amorphous silicon nitride films , 1990 .
[67] Silver,et al. Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects. , 1990, Physical review. B, Condensed matter.
[68] Tanaka,et al. Origin of optically induced electron-spin resonance in hydrogenated amorphous silicon. , 1990, Physical review letters.
[69] Warren,et al. Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride. , 1990, Physical review. B, Condensed matter.
[70] Warren,et al. First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride. , 1990, Physical review letters.
[71] K. Shimakawa,et al. A model for ac conduction in amorphous silicon nitrides , 1990 .
[72] Fisher,et al. Structure of the self-trapped exciton in quartz. , 1990, Physical review letters.
[73] S. Elliott,et al. Photostructural changes in amorphous As50Se50 films : an EXAFS study , 1990 .
[74] Nakamura,et al. Generation mechanism of photoinduced paramagnetic centers from preexisting precursors in high-purity silicas. , 1990, Physical review. B, Condensed matter.
[75] D. Krick,et al. Evidence for a negative electron‐electron correlation energy in the dominant deep trapping center in silicon nitride films , 1990 .
[76] Suzuki,et al. Luminescence and defect formation in undensified and densified amorphous SiO2. , 1990, Physical review. B, Condensed matter.
[77] Patrick M. Lenahan,et al. First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride , 1990 .
[78] Tatsuo Shimizu,et al. Photo-created defects in a-Si:H as elucidated by ESR, LESR and CPM , 1989 .
[79] S. Kato,et al. Hydrogen dilution effects on properties of ECR plasma deposited a-Ge:H , 1989 .
[80] V. K. Tikhomirov,et al. Photodarkening and photoinduced anisotropy in chalcogenide vitreous semiconductor films , 1989 .
[81] W. D. Ohlsen,et al. Optically detected magnetic resonance of intrinsic luminescence in As2Se3 , 1989 .
[82] K. Shimakawa,et al. Electronic transport in organic amorphous polysilanes , 1989 .
[83] S. Yamasaki,et al. Dependence of effective electron-electron correlation energies of defects on average coordination number in chalcogenide glasses☆ , 1989 .
[84] M. Paesler,et al. Identification of IRO structures in photodarkening: A high pressure study of As2S3 , 1989 .
[85] T. Tada,et al. Photoluminescence from optically induced metastable states in a-As2S3 , 1989 .
[86] R. M. Lambert,et al. Surface science lettersNovel photoinduced surface oxidation of an amorphous semiconductor: An XPS study of vitreous arsenic sulphide , 1989 .
[87] R. M. Lambert,et al. Novel photoinduced surface oxidation of an amorphous semiconductor: An XPS study of vitreous arsenic sulphide , 1989 .
[88] A. Kolobov,et al. Photo-induced selectivity of metal deposition on the surface of chalcogenide vitreous semiconductors , 1989 .
[89] Pfeiffer.,et al. Structural models of glassy As2S3: Intermediate-range order and photostructural changes. , 1989, Physical review. B, Condensed matter.
[90] Itoh,et al. Threshold energy for photogeneration of self-trapped excitons in SiO2. , 1989, Physical review. B, Condensed matter.
[91] M. Yao,et al. Photo-Induced Phenomena in Isolated Selenium Chains , 1989 .
[92] D. Redfield,et al. Reinterpretation of degradation kinetics of amorphous silicon , 1989 .
[93] D. Redfield. Critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’’ [Appl. Phys. Lett. 45, 1075 (1984)] , 1989 .
[94] Devine. Defect creation and two-photon absorption in amorphous SiO2. , 1989, Physical review letters.
[95] A. R. Long,et al. Optically induced frequency-dependent loss in hydrogenated amorphous silicon , 1988 .
[96] Elliott,et al. Reversible photoinduced change of ac conduction in amorphous As2S3 films. , 1988, Physical review. B, Condensed matter.
[97] S. Elliott,et al. Photostructural changes in bulk chalcogenide glasses: An EXAFS study , 1988 .
[98] Taylor,et al. Optically induced electron-spin resonance in AsxS , 1988, Physical review. B, Condensed matter.
[99] Arun Madan,et al. The Physics and Applications of Amorphous Semiconductors , 1988 .
[100] D. Krick,et al. Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study , 1988 .
[101] Watanabe,et al. Erratum: Imperfections in amorphous chalcogenides. II. Detection and structure determination of neutral defects in As-S, Ge-S, and Ge-As-S glasses , 1988, Physical review. B, Condensed matter.
[102] Jerzy Kanicki,et al. Electron Spin Resonance Spectroscopy Of Defects In Low Temperature Dielectric Films , 1988, Other Conferences.
[103] M. Klinger. Glassy disordered systems: Topology, atomic dynamics and localized electron states , 1988 .
[104] Tsai,et al. Mechanism of intrinsic Si E'-center photogeneration in high-purity silica. , 1988, Physical review letters.
[105] A. Shluger. The model of a triplet self-trapped exciton in crystalline SiO2 , 1988 .
[106] J. Ristein,et al. Microscopic structure of the radiative centre in As2Se3 crystals , 1988 .
[107] M. Koós,et al. Fatigue and low temperature self-recovery of photoluminescence in a-Si: H , 1988 .
[108] Yang,et al. Measurement of local structural configurations associated with reversible photostructural changes in arsenic trisulfide films. , 1987, Physical review. B, Condensed matter.
[109] H. Ticha,et al. Photoinduced changes of optical properties of amorphous chalcogenide films at ambient air pressure , 1987 .
[110] M. Abkowitz,et al. Electronic transport in glassy Si-backbone polymers , 1987 .
[111] K. Morigaki,et al. Observation of different types of dangling bonds and their photo-creation in a-Si:H, as elucidated by endor measurements , 1987 .
[112] J. Stuchlík,et al. Deep states in a-Si:H- changes with light soaking and applied stress , 1987 .
[113] A. R. Long,et al. Frequency dependent loss in glow discharge amorphous silicon , 1987 .
[114] C. Spence,et al. The mechanism of giant photo-contraction in obliquely-deposited thin films of amorphous germanium chalcogenides , 1987 .
[115] H. Naito,et al. Photo-induced phenomena in transport properties of a-As2Se3 , 1987 .
[116] A. Boonstra,et al. REVERSIBLE DANGLING-BOND GENERATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS , 1987 .
[117] Yoshiro Suzuki,et al. Photo-induced absorption chance in a-AS2S3 films at 80K , 1987 .
[118] Elliott,et al. Photoinduced changes of ac transport in amorphous As2S , 1987, Physical review. B, Condensed matter.
[119] T. Ohsuna,et al. Isolating individual chains of selenium by incorporation into the channels of a zeolite , 1987, Nature.
[120] Taylor Pc,et al. Absence of photodarkening in bulk, glassy As2S , 1987 .
[121] Jackson,et al. Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen. , 1987, Physical review. B, Condensed matter.
[122] M. Kumeda,et al. Dependence of the photoluminescence fatigue on the illumination temperature for a-Si :H , 1987 .
[123] Daxing Han,et al. Light-induced metastable defects in a-Si:H as elucidated by optically detected magnetic resonance measurements at 2K , 1987 .
[124] Jackson,et al. Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon. , 1987, Physical review letters.
[125] A. R. Long,et al. Frequency-dependent loss in sandwich samples of hydrogenated amorphous silicon , 1987 .
[126] Kuroda,et al. 1H electron-nuclear-double-resonance-detected ESR of light-soaked undoped a-Si:H. , 1987, Physical review. B, Condensed matter.
[127] Kurtz,et al. Photocarrier generation and transport in sigma -bonded polysilanes. , 1987, Physical review. B, Condensed matter.
[128] R. Schropp,et al. Instability mechanism in hydrogenated amorphous silicon thin‐film transistors , 1987 .
[129] Tsai,et al. Thermal-equilibrium processes in amorphous silicon. , 1987, Physical review. B, Condensed matter.
[130] E. Friebele,et al. Radiation-Induced Optical Absorption in Amorphous Silicas Prepared by Different Techniques , 1987 .
[131] A. J. Lowe,et al. Extended X-ray absorption fine-structure spectroscopy study of photostructural changes in amorphous arsenic chalcogenides , 1986 .
[132] W. Hayes,et al. Charge-trapping properties of germanium in crystalline quartz , 1986 .
[133] A. Watanabe,et al. Frequency-dependent transport in glow-discharge amorphous silicon , 1986 .
[134] S. A. Dembovsky,et al. Glassy state clarified through chemical bonds and their defects , 1986 .
[135] Adler,et al. Structure and electronic states in disordered systems. , 1986, Physical review letters.
[136] M. Z. Butt,et al. Anomalous yielding in alloys at low temperatures , 1986 .
[137] Marshall,et al. Metastable defects in amorphous-silicon thin-film transistors. , 1986, Physical review letters.
[138] E. Eser. Light‐induced degradation and thermal recovery of the photoconductivity in hydrogenated amorphous silicon films , 1986 .
[139] A. J. Lowe,et al. The electronic properties of plasma‐deposited films of hydrogenated amorphous SiNx (0 , 1986 .
[140] R. West. The polysilane high polymers , 1986 .
[141] S. Yamasaki,et al. The Isolated Se Chains in the Channels of Mordenite Crystal , 1986 .
[142] S. Nitta,et al. Nitrogen-related defects and their role in the photo-induced phenomena in a-Si1−xNx:H , 1985 .
[143] I. Shimizu. Photoelectric application of a-Si:H and related material-image devices , 1985 .
[144] Michael Thorpe,et al. Rigidity percolation in glassy structures , 1985 .
[145] M. Yoshida,et al. Gap states in hydrogenated amorphous silicon The origins of the light-induced ESR and the low-energy luminescence , 1985 .
[146] Tatsuo Shimizu,et al. ESR Studies on the Light-Induced Effect in Si-Based Amorphous Semiconductors , 1985 .
[147] A. Watanabe,et al. a.c. Conduction originated from the atomic two-levels systems in hydrogenated amorphous silicon , 1985 .
[148] G. Kordas,et al. Paramagnetic conduction electrons in GeSx-glasses , 1985 .
[149] R. T. Phillips. Photodarkening of amorphous selenium , 1985 .
[150] H. Tsutsu,et al. Photodarkening in glassy As2S3 under pressure , 1984 .
[151] Chuang‐Chuang Tsai,et al. Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon , 1984 .
[152] A. Owen,et al. Reversible photodarkening and structural changes in As2S3 thin films , 1984 .
[153] J. Harbison,et al. Radiative recombination at dangling bonds in a-Si:H , 1984 .
[154] Tatsuo Shimizu,et al. Photo-Induced ESR in Amorphous Si1-xNx:H Films , 1984 .
[155] S. Hudgens,et al. Annealing behavior of light‐induced defects in hydrogenated amorphous silicon alloys , 1984 .
[156] James H. Stathis,et al. Photoinduced Paramagnetic Defects in Amorphous Silicon Dioxide , 1984 .
[157] S. Doherty,et al. ODMR of recombination centres in crystalline quartz , 1984 .
[158] John Robertson,et al. Gap states in silicon nitride , 1984 .
[159] H. Pfleiderer,et al. Photo-induced degradation of a-Si: H diodes with an nin structure , 1984 .
[160] Keiji Tanaka,et al. Anomaly of the thickness dependence of photodarkening in amorphous chalcogenide films , 1984 .
[161] I. Hirabayashi,et al. Light induced metastable effect on the short lived photoinduced midgap absorption in hydrogenated amorphous silicon , 1983 .
[162] K. Murayama. Time-resolved photoluminescence in chalcogenide glasses , 1983 .
[163] W. Spear. The study of transport and related properties of amorphous silicon by transient experiments , 1983 .
[164] A. Firth,et al. Explanation of the laser-induced oscillatory phenomenon in amorphous semiconductor films , 1983 .
[165] Takeshi Tanaka,et al. Creation of Quasistable Lattice Defects by Electronic Excitation in SiO2 , 1983 .
[166] M. Tazawa,et al. A New Method of Grating Spectroscopy , 1983 .
[167] M. F. Kotkata,et al. An X-ray study of As−Se−Te compounds , 1983 .
[168] I. Jánossy,et al. OPTICAL BISTABILITY OBSERVED IN AMORPHOUS SEMICONDUCTOR FILMS , 1983 .
[169] S. Kurita,et al. Influence of Ag Photodoping on Photoinduced Changes in As2S3 Glass Films , 1983 .
[170] J. Robertson,et al. Theory of defects in vitreous silicon dioxide , 1983 .
[171] N. Amer,et al. The contribution of the staebler-wronski effect to gap-state absorption in hydrogenated amorphous silicon , 1983 .
[172] J. Morniroli,et al. Crystalline defects in M7C3 carbides , 1983 .
[173] A. R. Long. Frequency-dependent loss in amorphous semiconductors , 1982 .
[174] V. Malinovsky,et al. Local heating and photostructure transformations in chalcogenide vitreous semiconductors , 1982 .
[175] Y. Nannichi,et al. Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon , 1982 .
[176] K. Shimakawa. On the temperature dependence of a.c. conduction in chalcogenide glasses , 1982 .
[177] Y. Hsia,et al. Empirical study of the metal‐nitride‐oxide‐semiconductor device characteristics deduced from a microscopic model of memory traps , 1982 .
[178] K. L. Chopra,et al. Photo-optical changes in Ge-chalcogenide films , 1982 .
[179] M. A. Bösch,et al. Hot photoluminescence in amorphous As 2 S 3 , 1982 .
[180] B. Wilson,et al. Time-resolved photoluminescence in a-Si:H: Sub-band-gap excitation , 1982 .
[181] B. Cavenett,et al. Exciton and Pair Recombination at Intimate Valence-Alternation Pairs ina-As2S3 , 1982 .
[182] A. Kolobov,et al. Effect of pressure on photoinduced changes in chalcogenide vitreous semiconductors , 1982 .
[183] P. J. Gaczi. As and S centred paramagnetic species in sulphide glasses , 1982 .
[184] Keiji Tanaka,et al. Configuration-coordinate model for photodarkening in amorphous As2S3 , 1981 .
[185] Keiji Tanaka,et al. Photoinduced Elastic Changes in Amorphous As2S3 Films , 1981 .
[186] K. Tanaka,et al. DETAILED TEMPERATURE-CYCLING STUDIES OF PHOTOSTRUCTURAL CHANGE IN a-As2S3 , 1981 .
[187] A. Kolobov,et al. A model of photostructural changes in chalcogenide vitreous semiconductors: 1. Theoretical considerations , 1981 .
[188] Y. Toyozawa,et al. Interband Absorption Spectra of Disordered Semiconductors in the Coherent Potential Approximation , 1981 .
[189] M. Kastner,et al. Excitation-Energy Dependence of Photoluminescence Bandwidth in a - As 2 S 3 : Observation of the Mobility Gap? , 1981 .
[190] J. Stuke,et al. Light‐induced dangling bonds in hydrogenated amorphous silicon , 1981 .
[191] J. Pankove,et al. Light‐induced radiative recombination centers in hydrogenated amorphous silicon , 1980 .
[192] E. Davis,et al. On the absence of photodarkening in pnictide amorphous semiconductors , 1980 .
[193] S. Nitta,et al. New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon , 1980 .
[194] Robert A. Street,et al. Photoinduced Defects in Chalcogenide Glasses , 1980 .
[195] R. Street,et al. Luminescence and ESR studies of defects in hydrogenated amorphous silicon , 1980 .
[196] K. Shimakawa,et al. Fatigue effect in luminescence of glow discharge amorphous silicon at low temperatures , 1980 .
[197] A. Kolobov,et al. Thermal and optical bleaching in darkened films of chalcogenide vitreous semiconductors , 1980 .
[198] R. Street,et al. Defects in bombarded amorphous silicon , 1979 .
[199] A. Kolobov,et al. The Urbach rule in the configuration-coordinate model of amorphous semiconductors , 1979 .
[200] T. Kitahara,et al. Change of Composition Ratio in Amorphous Arsenic Selenide Films Caused by Heat-Annealing and Photo-Irradiation , 1979 .
[201] C. T. Kirk. Valence alternation pair model of charge storage in MNOS memory devices , 1979 .
[202] E. Friebele,et al. Fundamental defect centers in glass : The peroxy radical in irradiated high-purity fused silica , 1979 .
[203] M. Frumar,et al. ESR study and model of paramagnetic defects in GeS glasses , 1979 .
[204] B. T. Kolomiets,et al. Photoinduced Optical Anisotropy in Chalcogenide Vitreous Semiconducting Films , 1979, April 16.
[205] T. Ninomiya,et al. Optical Detection of ESR in Amorphous As 2 S 3 , 1979 .
[206] E. Friebele,et al. Oxygen-associated trapped-hole centers in high-purity fused silicas , 1979 .
[207] D. Adler. Density of States in the Gap of Tetrahedrally Bonded Amorphous Semiconductors , 1978 .
[208] Robert A. Street,et al. Thermally induced effects in evaporated chalcogenide films. II. Optical absorption , 1978 .
[209] B. Kolomiets,et al. Reversible photoinduced changes in the properties of chalcogenide vitreous semiconductors , 1978 .
[210] M. Brodsky,et al. Electron spin resonance of ultrahigh vacuum evaporated amorphous silicon: In situ and ex situ studies , 1978 .
[211] Y. Mizushima,et al. Photostructural change of lattice‐vibrational spectra in Se‐Ge chalcogenide glass , 1978 .
[212] M. Kastner,et al. Evidence for the neutrality of luminescence centres in chalcogenide glasses , 1978 .
[213] Y. Mita,et al. Reversible photostructural change in chalcogenide glass films observed in infrared absorption spectra , 1977 .
[214] S. Elliott. A theory of a.c. conduction in chalcogenide glasses , 1977 .
[215] G. Zentai,et al. Light-induced transmittance oscillation in GeSe2 thin films , 1977 .
[216] Yoshihiko Mizushima,et al. A new inorganic electron resist of high contrast , 1977 .
[217] H. Hamanaka,et al. Reversible photostructural change in melt-quenched GeS2 glass , 1977 .
[218] K. Shimakawa,et al. AC conduction in glow-discharge amorphous silicon films☆ , 1977 .
[219] D. Biegelsen,et al. Optically induced electron spin resonance in doped amorphous silicon , 1977 .
[220] D. Adler,et al. Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors , 1976 .
[221] R. Street. Luminescence in amorphous semiconductors , 1976 .
[222] D. Carlson,et al. AMORPHOUS SILICON SOLAR CELL , 1976 .
[223] R. Martin,et al. Intermolecular bonding and lattice dynamics of Se and Te , 1976 .
[224] R. Street,et al. States in the Gap in Glassy Semiconductors , 1975 .
[225] R. Street,et al. States in the gap and recombination in amorphous semiconductors , 1975 .
[226] K. Tanaka. Evidence for reversible photostructural change in local order of amorphous As2S3 film , 1974 .
[227] A. Paton,et al. The crystal and molecular structure of tetrameric arsenic selenide, As4Se4 , 1974 .
[228] W. Fowler,et al. Oxygen vacancy model for the E1′ center in SiO2 , 1974 .
[229] F. Mollot,et al. Study of localized states in amorphous semiconductor chalcogenides by radiative recombination , 1974 .
[230] W. R. Salaneck,et al. Electric field dependent photodecomposition of a-As2Se3 , 1973 .
[231] H. Namikawa,et al. ESR in GeS glasses , 1973 .
[232] B. Averbach,et al. Crystalline structures of As2Se3 and As4Se4 , 1973 .
[233] R. Street,et al. Photoluminescence in amorphous As2S3 , 1973 .
[234] F. Mollot,et al. Radiative recombination in amorphous As2Se3 , 1973 .
[235] S. Agarwal. Nature of Localized States in Amorphous Semiconductors—A Study by Electron Spin Resonance , 1973 .
[236] G. Roland. Concerning the alpha -AsS realgar inversion , 1972 .
[237] S. W. Ing,et al. Photodecomposition of Amorphous As2Se3 and As2S3 , 1971 .
[238] S. Keneman. Hologram Storage in Arsenic Trisulfide Thin Films , 1971 .
[239] A. Ward,et al. Lattice Vibrations and Interlayer Interactions in CrystallineAs2S3andAs2Se3 , 1971 .
[240] J. C. Phillips,et al. Bonds and Bands in Semiconductors , 1970, Science.
[241] M. B. Myers,et al. Structural characterizations of vitreous inorganic polymers by thermal studies , 1967 .
[242] P. Anderson. Absence of Diffusion in Certain Random Lattices , 1958 .
[243] R. A. Weeks,et al. Paramagnetic Resonance of Lattice Defects in Irradiated Quartz , 1956 .
[244] W. Känzig. Electron Spin Resonance ofV1-Centers , 1955 .
[245] A. Kolobov,et al. On the mechanism of photostructural changes in As-based vitreous chalcogenides microscopic, dynamic and electronic aspects , 1994 .
[246] H. Fritzsche,et al. Photo-induced creation of metastable defects in a-Si: H at low temperatures and their effect on the photoconductivity , 1994 .
[247] A. Kolobov,et al. Polarized photodoping of As2S3 films by silver , 1992 .
[248] C. H. Seager,et al. Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films , 1991 .
[249] M. Stutzmann,et al. Kinetics of light-induced defect creation in amorphous silicon: The constant degradation method , 1991 .
[250] K. Shimakawa,et al. Reversible photoinduced changes of optical and electronic transport properties in organopolysilanes , 1991 .
[251] H. Antoniadis,et al. High-field electron drift in a-Si:H* , 1991 .
[252] A. V. Kolobov,et al. Photoelectron spectroscopic investigation of photostructural transformations in glassy chalcogenide semiconductor films , 1991 .
[253] H. Naito,et al. Transient photoconductivity studies of the UV light soaked state of amorphous organic polysilanes , 1991 .
[254] A. Masuda,et al. Light-induced ESR and disappearance of photodarkening in amorphous Ge-S films alloyed with lead , 1991 .
[255] M. Paesler,et al. Modeling the structure and photostructural changes in amorphous arsenic sulfide , 1991 .
[256] H. Fritzsche,et al. Metastable defect states and equilibration temperatures in a-SiNx:H, a-SiOx:H and a-SiCx:H , 1991 .
[257] M. Hirose,et al. Effects of atomic hydrogen injection on ECR plasma deposition of a-Ge:H , 1991 .
[258] John Robertson,et al. ELECTRONIC-STRUCTURE OF SILICON-NITRIDE , 1991 .
[259] R. Street,et al. THERMAL EQUILIBRIUM EFFECTS IN DOPED HYDROGENATED AMORPHOUS SILICON , 1989 .
[260] H. Fritzsche,et al. PHOTOLUMINESCENCE IN a-Si:H FILMS AND MULTILAYERS , 1989 .
[261] Hellmut Fritzsche,et al. Amorphous silicon and related materials , 1989 .
[262] W. Fuhs,et al. Recombination in a-Si:H-TEMPERATURE and Field Quenching of the Photoluminescence , 1989 .
[263] Y. Hamakawa,et al. Amorphous silicon technology , 1988 .
[264] K. Morigaki. Chapter 4 Optically Detected Magnetic Resonance , 1984 .
[265] E. N. Economou,et al. Exponential Band Tails in Random Systems , 1984 .
[266] D. Vanderbilt,et al. Theory of defect states in glassy selenium , 1980 .
[267] S. Nonomura,et al. AC conduction of the heavily doped glow discharge amorphous silicon films , 1980 .
[268] Keiji Tanaka. Relations between dynamical and reversible photoinduced changes , 1980 .
[269] P. Apai,et al. Investigation of laser induced light absorption oscillation , 1980 .
[270] P. Klein,et al. Photostructural effects in glassy As2Se3 and As2S3 , 1980 .
[271] R. Fischer,et al. Photoluminescence in amorphous silicon , 1977 .
[272] B. Seraphin. Optical Properties of Solids: New Developments , 1976 .
[273] Stanford R. Ovshinsky,et al. Photostructural transformations in amorphous As2Se3 and As2S3 films , 1974 .
[274] H. R. Philipp,et al. Optical properties of non-crystalline Si, SiO, SiOx and SiO2 , 1971 .
[275] N. Mott,et al. Electronic Processes In Non-Crystalline Materials , 1940 .