Photoinduced effects and metastability in amorphous semiconductors and insulators

Amorphous semiconductors, being intrinsically metastable in nature, exhibit a wide variety of changes in their physical properties, particularly when photoinduced using bandgap illumination. This article reviews the photoinduced phenomena exhibited by amorphous semiconductors such as amorphous hydrogenated silicon (and other tetrahedrally coordinated materials) and chalcogenide glasses. Features exhibited in common by all types of amorphous semiconductors, whether in the experimentally observed photoinduced metastability or the theoretical models used to account for such behaviour, are stressed.

[1]  A. Kondo,et al.  Microscopic Mechanisms of Light-Induced Metastable Defects in a-Si:H , 1995 .

[2]  Katsuhisa Tanaka,et al.  Giant photoexpansion in As2S3 glass , 1994 .

[3]  A. Masuda,et al.  Correlation between a.c. transport and electron spin resonance in amorphous Ge-S films alloyed with lead , 1994 .

[4]  Weber,et al.  Hydrogen diffusion in a-Si:H stimulated by intense illumination. , 1994, Physical review. B, Condensed matter.

[5]  Brandt,et al.  Pulsed-light soaking of hydrogenated amorphous silicon. , 1994, Physical review. B, Condensed matter.

[6]  C. Ong,et al.  Stability of a self-trapping hole in alpha -quartz , 1994 .

[7]  Elliott,et al.  Metastable optical anisotropy in chalcogenide glasses induced by unpolarized light. , 1994, Physical review. B, Condensed matter.

[8]  V. Tikhomirov,et al.  Photoinduced anisotropic phenomena in chalcogenide glasses : light-scattering and spectral selectivity , 1994 .

[9]  H. Fritzsche,et al.  Light-induced metastable changes in amorphous silicon nitride , 1994 .

[10]  K. Shiraishi,et al.  Photocreated metastable state in organopolysilanes , 1993 .

[11]  I. Hirabayashi,et al.  Temperature dependence of photoluminescence spectra and model of self-trapping of holes in a-Si:H , 1993 .

[12]  F. Yonezawa,et al.  Dispersive model for the creation and annealing processes of light-induced defects in a-Si:H , 1993 .

[13]  S. Maruno,et al.  Mechanism of photosurface deposition , 1993 .

[14]  H. Naito,et al.  Light-induced states in a-As2Se3: comparison with a-Si:H , 1993 .

[15]  K. Takeda,et al.  The presence of different kinds of dangling bonds and their light-induced creation in a-Si:H , 1993 .

[16]  H. Oheda Discontinuous change of photoluminescence lifetime with temperature in hydrogenated amorphous silicon , 1993 .

[17]  S. Rosenwaks,et al.  Anisotropy of photoinduced light-scattering in glassy As2S3 , 1993 .

[18]  K. Shimakawa,et al.  Photoinduced metastable defects in amorphous semiconductors : communality between hydrogenated amorphous silicon and chalcogenides , 1993 .

[19]  S. Yamasaki,et al.  Pulsed-ESR study of light-induced metastable defect in a-Si:H , 1993 .

[20]  Y. Shinozuka Reconsideration of Electron-lattice Interaction in Amorphous Semiconductors , 1993 .

[21]  W. Fuhs,et al.  Non-equilibrium carriers in a-Si:H excited by defect absorption , 1993 .

[22]  W. L. Warren,et al.  Defects in amorphous hydrogenated silicon nitride films , 1993 .

[23]  Tatsuo Shimizu,et al.  Photoinduced ESR in amorphous silicon alloyed with various amounts of nitrogen , 1993 .

[24]  R. Street,et al.  Accelerated hydrogen migration under steady-state and pulsed illumination in a-Si:H , 1993 .

[25]  Edwards Theory of the self-trapped hole in a-SiO2. , 1993, Physical review letters.

[26]  H. Fritzsche,et al.  The origin of reversible and irreversible photostructural changes in chalcogenide glasses , 1993 .

[27]  S. Elliott,et al.  Reversible electron‐beam writing on a submicron scale in a superionic amorphous film , 1993 .

[28]  S. Tsuda,et al.  Trapping and Recombination of Photogenerated Carriers in As-Grown High-Temperature-Annealed and Light-Soaked a-Si:H , 1993 .

[29]  Greene,et al.  Primary relaxation processes at the band edge of SiO2. , 1993, Physical review letters.

[30]  Carlos Frederico de Oliveira Graeff,et al.  Light‐induced annealing of metastable defects in hydrogenated amorphous silicon , 1993 .

[31]  A. Stoneham,et al.  Small polarons in real crystals: concepts and problems , 1993 .

[32]  Santos,et al.  Hydrogen migration and electronic carriers in a-Si:H. , 1993, Physical review. B, Condensed matter.

[33]  Mikkelsen,et al.  X-ray creation and activation of electron spin resonance in vitreous silica. , 1993, Physical review. B, Condensed matter.

[34]  Dyre Universal ac conductivity of nonmetallic disordered solids at low temperatures. , 1993, Physical review. B, Condensed matter.

[35]  Tatsuo Shimizu Tatsuo Shimizu,et al.  Light Soaking of a-Si:H at 77 K , 1993 .

[36]  Nelson,et al.  Light-enhanced deep deuterium emission and the diffusion mechanism in amorphous silicon. , 1993, Physical review. B, Condensed matter.

[37]  Graeme Maxwell,et al.  UV written 13 dB reflection filters in hydrogenated low loss planar silica waveguides , 1993 .

[38]  Aoki,et al.  dc and ac photoconductivities in hydrogenated amorphous germanium. , 1992, Physical review. B, Condensed matter.

[39]  A. Kolobov,et al.  Athermal photo-amorphization of As50Se50 films , 1992 .

[40]  Elliott,et al.  Origin of photoinduced metastable defects in amorphous chalcogenides. , 1992, Physical review. B, Condensed matter.

[41]  P. W. Wang,et al.  Some effects of 5 eV photons on defects in SiO2 , 1992 .

[42]  Anatoly N. Trukhin,et al.  Excitons in SiO2: a review , 1992 .

[43]  K. Shimakawa,et al.  ac transport in amorphous silicon‐nitrogen alloys , 1992 .

[44]  Santos,et al.  Trap-limited hydrogen diffusion in a-Si:H. , 1992, Physical review. B, Condensed matter.

[45]  Meaudre Influence of illumination during annealing of quenched defects in undoped amorphous silicon. , 1992, Physical review. B, Condensed matter.

[46]  S. Wagner,et al.  Temperature and intensity dependence of the saturated density of light‐induced defects in hydrogenated amorphous silicon , 1992 .

[47]  Mitsunori Mori,et al.  Monte Carlo simulation of dispersive transient transport in percolation clusters , 1992 .

[48]  Suzuki,et al.  Resonance Raman scattering of the self-trapped exciton in alkali halides. , 1992, Physical review letters.

[49]  Huang,et al.  Kinetics of optically generated defects in hydrogenated amorphous silicon. , 1991, Physical review. B, Condensed matter.

[50]  Santos,et al.  Light-enhanced hydrogen motion in a-Si:H. , 1991, Physical review letters.

[51]  Andraka,et al.  Observation of non-Fermi-liquid behavior in U0.2Y0.8Pd3. , 1991, Physical review letters.

[52]  Tsai Te,et al.  Experimental evidence for excitonic mechanism of defect generation in high-purity silica. , 1991 .

[53]  Brandt,et al.  Fast metastable defect-creation in amorphous silicon by femtosecond light pulses. , 1991, Physical review letters.

[54]  I. Jánossy,et al.  Kinetics of optical reorientation in amorphous GeSe2, films , 1991 .

[55]  A. Kolobov,et al.  Photodoping of amorphous chalcogenides by metals , 1991 .

[56]  A. V. K. And,et al.  Effect of conductive substrate on dissolution and lateral diffusion of metals in vitreous chalcogenides , 1991 .

[57]  Michael A. Paesler,et al.  Reversible photodarkening of amorphous arsenic chalcogens , 1991 .

[58]  A. Masuda,et al.  Relationship between Photodarkening and Light-Induced ESR in Amorphous Ge-S Films Alloyed with Lead , 1991 .

[59]  I. Chambouleyron,et al.  Light-induced metastability in a-Ge" H , 1991 .

[60]  Alexander L. Shluger,et al.  Self-trapped excitons and interstitial-vacancy pairs in oxides , 1991 .

[61]  Crandall Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect. , 1991, Physical review. B, Condensed matter.

[62]  Keiji Tanaka,et al.  Photodoping in the Ag/As─S system induced by pulsed light , 1991 .

[63]  Elliott,et al.  Reversible photoinduced change of photoconductivity in amorphous chalcogenide films. , 1990, Physical review. B, Condensed matter.

[64]  Elliott,et al.  Model for bond-breaking mechanisms in amorphous arsenic chalcogenides leading to light-induced electron-spin resonance. , 1990, Physical review. B, Condensed matter.

[65]  Stefanovich,et al.  Models of the self-trapped exciton and nearest-neighbor defect pair in SiO2. , 1990, Physical review. B, Condensed matter.

[66]  J. Kanicki,et al.  Photobleaching of light‐induced paramagnetic defects in amorphous silicon nitride films , 1990 .

[67]  Silver,et al.  Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects. , 1990, Physical review. B, Condensed matter.

[68]  Tanaka,et al.  Origin of optically induced electron-spin resonance in hydrogenated amorphous silicon. , 1990, Physical review letters.

[69]  Warren,et al.  Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride. , 1990, Physical review. B, Condensed matter.

[70]  Warren,et al.  First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride. , 1990, Physical review letters.

[71]  K. Shimakawa,et al.  A model for ac conduction in amorphous silicon nitrides , 1990 .

[72]  Fisher,et al.  Structure of the self-trapped exciton in quartz. , 1990, Physical review letters.

[73]  S. Elliott,et al.  Photostructural changes in amorphous As50Se50 films : an EXAFS study , 1990 .

[74]  Nakamura,et al.  Generation mechanism of photoinduced paramagnetic centers from preexisting precursors in high-purity silicas. , 1990, Physical review. B, Condensed matter.

[75]  D. Krick,et al.  Evidence for a negative electron‐electron correlation energy in the dominant deep trapping center in silicon nitride films , 1990 .

[76]  Suzuki,et al.  Luminescence and defect formation in undensified and densified amorphous SiO2. , 1990, Physical review. B, Condensed matter.

[77]  Patrick M. Lenahan,et al.  First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride , 1990 .

[78]  Tatsuo Shimizu,et al.  Photo-created defects in a-Si:H as elucidated by ESR, LESR and CPM , 1989 .

[79]  S. Kato,et al.  Hydrogen dilution effects on properties of ECR plasma deposited a-Ge:H , 1989 .

[80]  V. K. Tikhomirov,et al.  Photodarkening and photoinduced anisotropy in chalcogenide vitreous semiconductor films , 1989 .

[81]  W. D. Ohlsen,et al.  Optically detected magnetic resonance of intrinsic luminescence in As2Se3 , 1989 .

[82]  K. Shimakawa,et al.  Electronic transport in organic amorphous polysilanes , 1989 .

[83]  S. Yamasaki,et al.  Dependence of effective electron-electron correlation energies of defects on average coordination number in chalcogenide glasses☆ , 1989 .

[84]  M. Paesler,et al.  Identification of IRO structures in photodarkening: A high pressure study of As2S3 , 1989 .

[85]  T. Tada,et al.  Photoluminescence from optically induced metastable states in a-As2S3 , 1989 .

[86]  R. M. Lambert,et al.  Surface science lettersNovel photoinduced surface oxidation of an amorphous semiconductor: An XPS study of vitreous arsenic sulphide , 1989 .

[87]  R. M. Lambert,et al.  Novel photoinduced surface oxidation of an amorphous semiconductor: An XPS study of vitreous arsenic sulphide , 1989 .

[88]  A. Kolobov,et al.  Photo-induced selectivity of metal deposition on the surface of chalcogenide vitreous semiconductors , 1989 .

[89]  Pfeiffer.,et al.  Structural models of glassy As2S3: Intermediate-range order and photostructural changes. , 1989, Physical review. B, Condensed matter.

[90]  Itoh,et al.  Threshold energy for photogeneration of self-trapped excitons in SiO2. , 1989, Physical review. B, Condensed matter.

[91]  M. Yao,et al.  Photo-Induced Phenomena in Isolated Selenium Chains , 1989 .

[92]  D. Redfield,et al.  Reinterpretation of degradation kinetics of amorphous silicon , 1989 .

[93]  D. Redfield Critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’’ [Appl. Phys. Lett. 45, 1075 (1984)] , 1989 .

[94]  Devine Defect creation and two-photon absorption in amorphous SiO2. , 1989, Physical review letters.

[95]  A. R. Long,et al.  Optically induced frequency-dependent loss in hydrogenated amorphous silicon , 1988 .

[96]  Elliott,et al.  Reversible photoinduced change of ac conduction in amorphous As2S3 films. , 1988, Physical review. B, Condensed matter.

[97]  S. Elliott,et al.  Photostructural changes in bulk chalcogenide glasses: An EXAFS study , 1988 .

[98]  Taylor,et al.  Optically induced electron-spin resonance in AsxS , 1988, Physical review. B, Condensed matter.

[99]  Arun Madan,et al.  The Physics and Applications of Amorphous Semiconductors , 1988 .

[100]  D. Krick,et al.  Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study , 1988 .

[101]  Watanabe,et al.  Erratum: Imperfections in amorphous chalcogenides. II. Detection and structure determination of neutral defects in As-S, Ge-S, and Ge-As-S glasses , 1988, Physical review. B, Condensed matter.

[102]  Jerzy Kanicki,et al.  Electron Spin Resonance Spectroscopy Of Defects In Low Temperature Dielectric Films , 1988, Other Conferences.

[103]  M. Klinger Glassy disordered systems: Topology, atomic dynamics and localized electron states , 1988 .

[104]  Tsai,et al.  Mechanism of intrinsic Si E'-center photogeneration in high-purity silica. , 1988, Physical review letters.

[105]  A. Shluger The model of a triplet self-trapped exciton in crystalline SiO2 , 1988 .

[106]  J. Ristein,et al.  Microscopic structure of the radiative centre in As2Se3 crystals , 1988 .

[107]  M. Koós,et al.  Fatigue and low temperature self-recovery of photoluminescence in a-Si: H , 1988 .

[108]  Yang,et al.  Measurement of local structural configurations associated with reversible photostructural changes in arsenic trisulfide films. , 1987, Physical review. B, Condensed matter.

[109]  H. Ticha,et al.  Photoinduced changes of optical properties of amorphous chalcogenide films at ambient air pressure , 1987 .

[110]  M. Abkowitz,et al.  Electronic transport in glassy Si-backbone polymers , 1987 .

[111]  K. Morigaki,et al.  Observation of different types of dangling bonds and their photo-creation in a-Si:H, as elucidated by endor measurements , 1987 .

[112]  J. Stuchlík,et al.  Deep states in a-Si:H- changes with light soaking and applied stress , 1987 .

[113]  A. R. Long,et al.  Frequency dependent loss in glow discharge amorphous silicon , 1987 .

[114]  C. Spence,et al.  The mechanism of giant photo-contraction in obliquely-deposited thin films of amorphous germanium chalcogenides , 1987 .

[115]  H. Naito,et al.  Photo-induced phenomena in transport properties of a-As2Se3 , 1987 .

[116]  A. Boonstra,et al.  REVERSIBLE DANGLING-BOND GENERATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS , 1987 .

[117]  Yoshiro Suzuki,et al.  Photo-induced absorption chance in a-AS2S3 films at 80K , 1987 .

[118]  Elliott,et al.  Photoinduced changes of ac transport in amorphous As2S , 1987, Physical review. B, Condensed matter.

[119]  T. Ohsuna,et al.  Isolating individual chains of selenium by incorporation into the channels of a zeolite , 1987, Nature.

[120]  Taylor Pc,et al.  Absence of photodarkening in bulk, glassy As2S , 1987 .

[121]  Jackson,et al.  Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen. , 1987, Physical review. B, Condensed matter.

[122]  M. Kumeda,et al.  Dependence of the photoluminescence fatigue on the illumination temperature for a-Si :H , 1987 .

[123]  Daxing Han,et al.  Light-induced metastable defects in a-Si:H as elucidated by optically detected magnetic resonance measurements at 2K , 1987 .

[124]  Jackson,et al.  Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon. , 1987, Physical review letters.

[125]  A. R. Long,et al.  Frequency-dependent loss in sandwich samples of hydrogenated amorphous silicon , 1987 .

[126]  Kuroda,et al.  1H electron-nuclear-double-resonance-detected ESR of light-soaked undoped a-Si:H. , 1987, Physical review. B, Condensed matter.

[127]  Kurtz,et al.  Photocarrier generation and transport in sigma -bonded polysilanes. , 1987, Physical review. B, Condensed matter.

[128]  R. Schropp,et al.  Instability mechanism in hydrogenated amorphous silicon thin‐film transistors , 1987 .

[129]  Tsai,et al.  Thermal-equilibrium processes in amorphous silicon. , 1987, Physical review. B, Condensed matter.

[130]  E. Friebele,et al.  Radiation-Induced Optical Absorption in Amorphous Silicas Prepared by Different Techniques , 1987 .

[131]  A. J. Lowe,et al.  Extended X-ray absorption fine-structure spectroscopy study of photostructural changes in amorphous arsenic chalcogenides , 1986 .

[132]  W. Hayes,et al.  Charge-trapping properties of germanium in crystalline quartz , 1986 .

[133]  A. Watanabe,et al.  Frequency-dependent transport in glow-discharge amorphous silicon , 1986 .

[134]  S. A. Dembovsky,et al.  Glassy state clarified through chemical bonds and their defects , 1986 .

[135]  Adler,et al.  Structure and electronic states in disordered systems. , 1986, Physical review letters.

[136]  M. Z. Butt,et al.  Anomalous yielding in alloys at low temperatures , 1986 .

[137]  Marshall,et al.  Metastable defects in amorphous-silicon thin-film transistors. , 1986, Physical review letters.

[138]  E. Eser Light‐induced degradation and thermal recovery of the photoconductivity in hydrogenated amorphous silicon films , 1986 .

[139]  A. J. Lowe,et al.  The electronic properties of plasma‐deposited films of hydrogenated amorphous SiNx (0 , 1986 .

[140]  R. West The polysilane high polymers , 1986 .

[141]  S. Yamasaki,et al.  The Isolated Se Chains in the Channels of Mordenite Crystal , 1986 .

[142]  S. Nitta,et al.  Nitrogen-related defects and their role in the photo-induced phenomena in a-Si1−xNx:H , 1985 .

[143]  I. Shimizu Photoelectric application of a-Si:H and related material-image devices , 1985 .

[144]  Michael Thorpe,et al.  Rigidity percolation in glassy structures , 1985 .

[145]  M. Yoshida,et al.  Gap states in hydrogenated amorphous silicon The origins of the light-induced ESR and the low-energy luminescence , 1985 .

[146]  Tatsuo Shimizu,et al.  ESR Studies on the Light-Induced Effect in Si-Based Amorphous Semiconductors , 1985 .

[147]  A. Watanabe,et al.  a.c. Conduction originated from the atomic two-levels systems in hydrogenated amorphous silicon , 1985 .

[148]  G. Kordas,et al.  Paramagnetic conduction electrons in GeSx-glasses , 1985 .

[149]  R. T. Phillips Photodarkening of amorphous selenium , 1985 .

[150]  H. Tsutsu,et al.  Photodarkening in glassy As2S3 under pressure , 1984 .

[151]  Chuang‐Chuang Tsai,et al.  Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon , 1984 .

[152]  A. Owen,et al.  Reversible photodarkening and structural changes in As2S3 thin films , 1984 .

[153]  J. Harbison,et al.  Radiative recombination at dangling bonds in a-Si:H , 1984 .

[154]  Tatsuo Shimizu,et al.  Photo-Induced ESR in Amorphous Si1-xNx:H Films , 1984 .

[155]  S. Hudgens,et al.  Annealing behavior of light‐induced defects in hydrogenated amorphous silicon alloys , 1984 .

[156]  James H. Stathis,et al.  Photoinduced Paramagnetic Defects in Amorphous Silicon Dioxide , 1984 .

[157]  S. Doherty,et al.  ODMR of recombination centres in crystalline quartz , 1984 .

[158]  John Robertson,et al.  Gap states in silicon nitride , 1984 .

[159]  H. Pfleiderer,et al.  Photo-induced degradation of a-Si: H diodes with an nin structure , 1984 .

[160]  Keiji Tanaka,et al.  Anomaly of the thickness dependence of photodarkening in amorphous chalcogenide films , 1984 .

[161]  I. Hirabayashi,et al.  Light induced metastable effect on the short lived photoinduced midgap absorption in hydrogenated amorphous silicon , 1983 .

[162]  K. Murayama Time-resolved photoluminescence in chalcogenide glasses , 1983 .

[163]  W. Spear The study of transport and related properties of amorphous silicon by transient experiments , 1983 .

[164]  A. Firth,et al.  Explanation of the laser-induced oscillatory phenomenon in amorphous semiconductor films , 1983 .

[165]  Takeshi Tanaka,et al.  Creation of Quasistable Lattice Defects by Electronic Excitation in SiO2 , 1983 .

[166]  M. Tazawa,et al.  A New Method of Grating Spectroscopy , 1983 .

[167]  M. F. Kotkata,et al.  An X-ray study of As−Se−Te compounds , 1983 .

[168]  I. Jánossy,et al.  OPTICAL BISTABILITY OBSERVED IN AMORPHOUS SEMICONDUCTOR FILMS , 1983 .

[169]  S. Kurita,et al.  Influence of Ag Photodoping on Photoinduced Changes in As2S3 Glass Films , 1983 .

[170]  J. Robertson,et al.  Theory of defects in vitreous silicon dioxide , 1983 .

[171]  N. Amer,et al.  The contribution of the staebler-wronski effect to gap-state absorption in hydrogenated amorphous silicon , 1983 .

[172]  J. Morniroli,et al.  Crystalline defects in M7C3 carbides , 1983 .

[173]  A. R. Long Frequency-dependent loss in amorphous semiconductors , 1982 .

[174]  V. Malinovsky,et al.  Local heating and photostructure transformations in chalcogenide vitreous semiconductors , 1982 .

[175]  Y. Nannichi,et al.  Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon , 1982 .

[176]  K. Shimakawa On the temperature dependence of a.c. conduction in chalcogenide glasses , 1982 .

[177]  Y. Hsia,et al.  Empirical study of the metal‐nitride‐oxide‐semiconductor device characteristics deduced from a microscopic model of memory traps , 1982 .

[178]  K. L. Chopra,et al.  Photo-optical changes in Ge-chalcogenide films , 1982 .

[179]  M. A. Bösch,et al.  Hot photoluminescence in amorphous As 2 S 3 , 1982 .

[180]  B. Wilson,et al.  Time-resolved photoluminescence in a-Si:H: Sub-band-gap excitation , 1982 .

[181]  B. Cavenett,et al.  Exciton and Pair Recombination at Intimate Valence-Alternation Pairs ina-As2S3 , 1982 .

[182]  A. Kolobov,et al.  Effect of pressure on photoinduced changes in chalcogenide vitreous semiconductors , 1982 .

[183]  P. J. Gaczi As and S centred paramagnetic species in sulphide glasses , 1982 .

[184]  Keiji Tanaka,et al.  Configuration-coordinate model for photodarkening in amorphous As2S3 , 1981 .

[185]  Keiji Tanaka,et al.  Photoinduced Elastic Changes in Amorphous As2S3 Films , 1981 .

[186]  K. Tanaka,et al.  DETAILED TEMPERATURE-CYCLING STUDIES OF PHOTOSTRUCTURAL CHANGE IN a-As2S3 , 1981 .

[187]  A. Kolobov,et al.  A model of photostructural changes in chalcogenide vitreous semiconductors: 1. Theoretical considerations , 1981 .

[188]  Y. Toyozawa,et al.  Interband Absorption Spectra of Disordered Semiconductors in the Coherent Potential Approximation , 1981 .

[189]  M. Kastner,et al.  Excitation-Energy Dependence of Photoluminescence Bandwidth in a - As 2 S 3 : Observation of the Mobility Gap? , 1981 .

[190]  J. Stuke,et al.  Light‐induced dangling bonds in hydrogenated amorphous silicon , 1981 .

[191]  J. Pankove,et al.  Light‐induced radiative recombination centers in hydrogenated amorphous silicon , 1980 .

[192]  E. Davis,et al.  On the absence of photodarkening in pnictide amorphous semiconductors , 1980 .

[193]  S. Nitta,et al.  New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon , 1980 .

[194]  Robert A. Street,et al.  Photoinduced Defects in Chalcogenide Glasses , 1980 .

[195]  R. Street,et al.  Luminescence and ESR studies of defects in hydrogenated amorphous silicon , 1980 .

[196]  K. Shimakawa,et al.  Fatigue effect in luminescence of glow discharge amorphous silicon at low temperatures , 1980 .

[197]  A. Kolobov,et al.  Thermal and optical bleaching in darkened films of chalcogenide vitreous semiconductors , 1980 .

[198]  R. Street,et al.  Defects in bombarded amorphous silicon , 1979 .

[199]  A. Kolobov,et al.  The Urbach rule in the configuration-coordinate model of amorphous semiconductors , 1979 .

[200]  T. Kitahara,et al.  Change of Composition Ratio in Amorphous Arsenic Selenide Films Caused by Heat-Annealing and Photo-Irradiation , 1979 .

[201]  C. T. Kirk Valence alternation pair model of charge storage in MNOS memory devices , 1979 .

[202]  E. Friebele,et al.  Fundamental defect centers in glass : The peroxy radical in irradiated high-purity fused silica , 1979 .

[203]  M. Frumar,et al.  ESR study and model of paramagnetic defects in GeS glasses , 1979 .

[204]  B. T. Kolomiets,et al.  Photoinduced Optical Anisotropy in Chalcogenide Vitreous Semiconducting Films , 1979, April 16.

[205]  T. Ninomiya,et al.  Optical Detection of ESR in Amorphous As 2 S 3 , 1979 .

[206]  E. Friebele,et al.  Oxygen-associated trapped-hole centers in high-purity fused silicas , 1979 .

[207]  D. Adler Density of States in the Gap of Tetrahedrally Bonded Amorphous Semiconductors , 1978 .

[208]  Robert A. Street,et al.  Thermally induced effects in evaporated chalcogenide films. II. Optical absorption , 1978 .

[209]  B. Kolomiets,et al.  Reversible photoinduced changes in the properties of chalcogenide vitreous semiconductors , 1978 .

[210]  M. Brodsky,et al.  Electron spin resonance of ultrahigh vacuum evaporated amorphous silicon: In situ and ex situ studies , 1978 .

[211]  Y. Mizushima,et al.  Photostructural change of lattice‐vibrational spectra in Se‐Ge chalcogenide glass , 1978 .

[212]  M. Kastner,et al.  Evidence for the neutrality of luminescence centres in chalcogenide glasses , 1978 .

[213]  Y. Mita,et al.  Reversible photostructural change in chalcogenide glass films observed in infrared absorption spectra , 1977 .

[214]  S. Elliott A theory of a.c. conduction in chalcogenide glasses , 1977 .

[215]  G. Zentai,et al.  Light-induced transmittance oscillation in GeSe2 thin films , 1977 .

[216]  Yoshihiko Mizushima,et al.  A new inorganic electron resist of high contrast , 1977 .

[217]  H. Hamanaka,et al.  Reversible photostructural change in melt-quenched GeS2 glass , 1977 .

[218]  K. Shimakawa,et al.  AC conduction in glow-discharge amorphous silicon films☆ , 1977 .

[219]  D. Biegelsen,et al.  Optically induced electron spin resonance in doped amorphous silicon , 1977 .

[220]  D. Adler,et al.  Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors , 1976 .

[221]  R. Street Luminescence in amorphous semiconductors , 1976 .

[222]  D. Carlson,et al.  AMORPHOUS SILICON SOLAR CELL , 1976 .

[223]  R. Martin,et al.  Intermolecular bonding and lattice dynamics of Se and Te , 1976 .

[224]  R. Street,et al.  States in the Gap in Glassy Semiconductors , 1975 .

[225]  R. Street,et al.  States in the gap and recombination in amorphous semiconductors , 1975 .

[226]  K. Tanaka Evidence for reversible photostructural change in local order of amorphous As2S3 film , 1974 .

[227]  A. Paton,et al.  The crystal and molecular structure of tetrameric arsenic selenide, As4Se4 , 1974 .

[228]  W. Fowler,et al.  Oxygen vacancy model for the E1′ center in SiO2 , 1974 .

[229]  F. Mollot,et al.  Study of localized states in amorphous semiconductor chalcogenides by radiative recombination , 1974 .

[230]  W. R. Salaneck,et al.  Electric field dependent photodecomposition of a-As2Se3 , 1973 .

[231]  H. Namikawa,et al.  ESR in GeS glasses , 1973 .

[232]  B. Averbach,et al.  Crystalline structures of As2Se3 and As4Se4 , 1973 .

[233]  R. Street,et al.  Photoluminescence in amorphous As2S3 , 1973 .

[234]  F. Mollot,et al.  Radiative recombination in amorphous As2Se3 , 1973 .

[235]  S. Agarwal Nature of Localized States in Amorphous Semiconductors—A Study by Electron Spin Resonance , 1973 .

[236]  G. Roland Concerning the alpha -AsS realgar inversion , 1972 .

[237]  S. W. Ing,et al.  Photodecomposition of Amorphous As2Se3 and As2S3 , 1971 .

[238]  S. Keneman Hologram Storage in Arsenic Trisulfide Thin Films , 1971 .

[239]  A. Ward,et al.  Lattice Vibrations and Interlayer Interactions in CrystallineAs2S3andAs2Se3 , 1971 .

[240]  J. C. Phillips,et al.  Bonds and Bands in Semiconductors , 1970, Science.

[241]  M. B. Myers,et al.  Structural characterizations of vitreous inorganic polymers by thermal studies , 1967 .

[242]  P. Anderson Absence of Diffusion in Certain Random Lattices , 1958 .

[243]  R. A. Weeks,et al.  Paramagnetic Resonance of Lattice Defects in Irradiated Quartz , 1956 .

[244]  W. Känzig Electron Spin Resonance ofV1-Centers , 1955 .

[245]  A. Kolobov,et al.  On the mechanism of photostructural changes in As-based vitreous chalcogenides microscopic, dynamic and electronic aspects , 1994 .

[246]  H. Fritzsche,et al.  Photo-induced creation of metastable defects in a-Si: H at low temperatures and their effect on the photoconductivity , 1994 .

[247]  A. Kolobov,et al.  Polarized photodoping of As2S3 films by silver , 1992 .

[248]  C. H. Seager,et al.  Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films , 1991 .

[249]  M. Stutzmann,et al.  Kinetics of light-induced defect creation in amorphous silicon: The constant degradation method , 1991 .

[250]  K. Shimakawa,et al.  Reversible photoinduced changes of optical and electronic transport properties in organopolysilanes , 1991 .

[251]  H. Antoniadis,et al.  High-field electron drift in a-Si:H* , 1991 .

[252]  A. V. Kolobov,et al.  Photoelectron spectroscopic investigation of photostructural transformations in glassy chalcogenide semiconductor films , 1991 .

[253]  H. Naito,et al.  Transient photoconductivity studies of the UV light soaked state of amorphous organic polysilanes , 1991 .

[254]  A. Masuda,et al.  Light-induced ESR and disappearance of photodarkening in amorphous Ge-S films alloyed with lead , 1991 .

[255]  M. Paesler,et al.  Modeling the structure and photostructural changes in amorphous arsenic sulfide , 1991 .

[256]  H. Fritzsche,et al.  Metastable defect states and equilibration temperatures in a-SiNx:H, a-SiOx:H and a-SiCx:H , 1991 .

[257]  M. Hirose,et al.  Effects of atomic hydrogen injection on ECR plasma deposition of a-Ge:H , 1991 .

[258]  John Robertson,et al.  ELECTRONIC-STRUCTURE OF SILICON-NITRIDE , 1991 .

[259]  R. Street,et al.  THERMAL EQUILIBRIUM EFFECTS IN DOPED HYDROGENATED AMORPHOUS SILICON , 1989 .

[260]  H. Fritzsche,et al.  PHOTOLUMINESCENCE IN a-Si:H FILMS AND MULTILAYERS , 1989 .

[261]  Hellmut Fritzsche,et al.  Amorphous silicon and related materials , 1989 .

[262]  W. Fuhs,et al.  Recombination in a-Si:H-TEMPERATURE and Field Quenching of the Photoluminescence , 1989 .

[263]  Y. Hamakawa,et al.  Amorphous silicon technology , 1988 .

[264]  K. Morigaki Chapter 4 Optically Detected Magnetic Resonance , 1984 .

[265]  E. N. Economou,et al.  Exponential Band Tails in Random Systems , 1984 .

[266]  D. Vanderbilt,et al.  Theory of defect states in glassy selenium , 1980 .

[267]  S. Nonomura,et al.  AC conduction of the heavily doped glow discharge amorphous silicon films , 1980 .

[268]  Keiji Tanaka Relations between dynamical and reversible photoinduced changes , 1980 .

[269]  P. Apai,et al.  Investigation of laser induced light absorption oscillation , 1980 .

[270]  P. Klein,et al.  Photostructural effects in glassy As2Se3 and As2S3 , 1980 .

[271]  R. Fischer,et al.  Photoluminescence in amorphous silicon , 1977 .

[272]  B. Seraphin Optical Properties of Solids: New Developments , 1976 .

[273]  Stanford R. Ovshinsky,et al.  Photostructural transformations in amorphous As2Se3 and As2S3 films , 1974 .

[274]  H. R. Philipp,et al.  Optical properties of non-crystalline Si, SiO, SiOx and SiO2 , 1971 .

[275]  N. Mott,et al.  Electronic Processes In Non-Crystalline Materials , 1940 .