论文信息 - Native-oxide-masked Si impurity-induced layer disordering of AlxGa1−xAs-AlyGa1−yAs-AlzGa1−zAs quantum-well heterostructures

Native-oxide-masked Si impurity-induced layer disordering of AlxGa1−xAs-AlyGa1−yAs-AlzGa1−zAs quantum-well heterostructures

Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1−xAs (x≳0.7) confining layers commonly employed on AlxGa1−xAs‐AlyGa1−yAs‐AlzGa1−zAs (y≳z) superlattices or quantum‐well heterostructures serves as an effective mask against Si diffusion, and thus impurity‐induced layer disordering. The high‐quality native oxide is produced by the conversion of high‐composition AlxGa1−xAs (x≳0.7) confining layers via H2O vapor oxidation (≳400 °C) in N2 carrier gas.

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