论文信息 - Photoconductivity gain over 10 at a large electric field in wide gap a-Si:H - 字舞流文

Photoconductivity gain over 10 at a large electric field in wide gap a-Si:H

T. Kamiya | C. Fortmann | I. Shimizu | W. Futako

[1] S. Guha. Material and device consideration for high efficiency a-Si alloy-based multijunction cells , 1996 .

[2] Kenjiro Nakamura,et al. Roles of Atomic Hydrogen in Chemical Annealing , 1995 .

[3] K. Sawada,et al. Photocurrent multiplication in hydrogenated amorphous silicon staircase photodiode films , 1994 .

[4] H. Overhof,et al. Electronic Transport in Hydrogenated Amorphous Semiconductors , 1989 .

[5] Y. Hatanaka,et al. The use of amorphous‐crystalline silicon heterojunctions for the application to an imaging device , 1987 .

[6] S. Oda,et al. The role of the blocking structure in hydrogenated amorphous silicon vidicon targets , 1981 .

[7] K. Tanioka,et al. Avalanche Multiplication of Photo-Generated Carriers in Amorphous Semiconductor, and its Application to Imaging Device , 1988 .