Design of a MMIC low‐noise amplifier in industrial gallium arsenide technology for E‐band 5G transceivers

The technology, design procedure and measurements of an E‐band (71‐86 GHz) high performance gallium arsenide (GaAs) low‐noise amplifier (LNA) are presented. The latter provides a gain in excess of 20 dB, an average in‐band noise figure (NF) of 2.3 dB, absorbing 60 mW DC bias power. A European space‐qualified technology (OMMIC's GaAs 70 nm process) has been selected to demonstrate the feasibility of employing the proposed LNA for production‐ready wireless backhaul point‐to‐point communication systems. A possible installation scenario has been depicted, in order to verify the maximum distance at which TX and RX antennas can be placed and employing the proposed LNA as first amplifying stage of the receiver chain.

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