Double gate GaInZnO thin film transistors
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Huaxiang Yin | Y. S. Park | Donghun Kang | Jin-seong Park | Chang Bum Lee | Changjung Kim | H. Yin | Hyuck Lim | I. Song | Jae-Chul Park | Sangwook Kim | Donghun Kang | Jin-Seong Park | Sunil Kim | Hyuck Lim | Chang-Jung Kim | I-hun Song | Jae-Chul Park | Sang-Wook Kim | Young Soo Park | Yong C. Kim | Sun-Il Kim
[1] D. Schroder. Semiconductor Material and Device Characterization , 1990 .
[2] D. Flandre,et al. Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors , 1991, IEEE Electron Device Letters.
[3] C. Maiti,et al. Electrical characterization of low temperature deposited oxide films on ZnO/n-Si substrate , 2003 .
[4] Changjung Kim,et al. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules , 2007 .
[5] H. Ohta,et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.
[6] Ho-Gi Kim,et al. Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering , 2006 .
[7] Yeon-Gon Mo,et al. Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment , 2007 .
[8] J. Colinge. Silicon-on-Insulator Technology , 1991 .