论文信息 - An ion‐implanted resistor as thermal transient sensor for the determination of the thermal diffusivity in silicon

An ion‐implanted resistor as thermal transient sensor for the determination of the thermal diffusivity in silicon

A high accuracy thermal transient sensor for investigations of doping influences on the thermal diffusivity in silicon is developed. The sensor is tested in a low doped n-type sample and in an intermediate doped p-type sample. In measurements on the p-type sample, doping effects are observable. Fur die Untersuchung von Dotierungseinflussen auf die Temperaturleitfahigkeit von Silizium wird ein genauer Temperaturtransienten-Sensor entwickelt. Der Sensor wird an einer niedrig dotierten n-Typ-Probe und einer mitteldotierten p-Typ-Probe getestet. In den Messungen an der p-Typ-Probe sind Dotierungseinflusse sichtbar.

P. Türkes | P. Türkes

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