论文信息 - Direct observation of carrier distribution in laser diode using off-axis electron holography and Lorentz microscopy

Direct observation of carrier distribution in laser diode using off-axis electron holography and Lorentz microscopy

The carrier distribution of a buried laser diode structure was examined using off-axis electron holography and Lorentz microscopy, and a two-dimensional structure of p-n junctions was clearly observed. The sensitivity of off-axis electron holography and Lorentz microscopy to different carrier concentrations of GaAs specimen was compared.

T. Hirayama | H. Sasaki | K. Yamamoto

[1] T. Hirayama,et al. Mapping of dopant concentration in a GaAs semiconductor by off-axis phase-shifting electron holography , 2006 .

[2] P. Midgley,et al. Comparison of off-axis and in-line electron holography as quantitative dopant-profiling techniques , 2006 .

[3] P. Midgley,et al. Quantitative electron holography of biased semiconductor devices. , 2002, Physical review letters.

[4] K. Sasaki,et al. Electron holographic characterization of electrostatic potential distributions in a transistor sample fabricated by focused ion beam , 2002 .

[5] Yamamoto,et al. High precision phase-shifting electron holography , 2001, Journal of electron microscopy.

[6] Peter Schwander,et al. TWO-DIMENSIONAL MAPPING OF THE ELECTROSTATIC POTENTIAL IN TRANSISTORS BY ELECTRON HOLOGRAPHY , 1999 .

[7] G. Pozzi,et al. Transmission electron microscopy observations of p–n junctions , 1975 .

[8] G. Pozzi,et al. Contrast Effects in the Out‐of‐Focus Images of a p‐n Junction , 1973 .

[9] G. Pozzi,et al. Observation of p–n junction in transmission electron microscopy by out‐of‐focus technique , 1973 .