Low-energy O+ ion beam induced chemical vapor deposition using hexamethyldisilane or hexamethyldisilazane for silicon dioxide film formation

[1]  M. Kiuchi,et al.  Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films , 2021, PloS one.

[2]  M. Kiuchi,et al.  Production of low-energy fragment-ion beams from hexamethyldisiloxane and the irradiation of SiO+ ion beam to substrates with supplemental oxygen gas for SiO2 film formation , 2020 .

[3]  P. Awakowicz,et al.  A numerical analysis of a microwave induced coaxial surface wave discharge fed with a mixture of oxygen and hexamethyldisiloxane for the purpose of deposition , 2019, Plasma Sources Science and Technology.

[4]  M. Kiuchi,et al.  Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane , 2019, AIP Advances.

[5]  M. Kiuchi,et al.  Effects of injected ion energy on silicon carbide film formation by low-energy SiCH3+ beam irradiation , 2019, Thin Solid Films.

[6]  Mary A. Gilliam,et al.  Characterization of the deposition behavior and changes in bonding structures of hexamethyldisiloxane and decamethylcyclopentasiloxane atmospheric plasma‐deposited films* , 2019, Plasma Processes and Polymers.

[7]  S. Saloum,et al.  Effect of surface modification on the properties of plasma‐polymerized hexamethyldisiloxane thin films , 2019, Surface and Interface Analysis.

[8]  T. Higuchi,et al.  Microstructured SiOx thin films deposited from hexamethyldisilazane and hexamethyldisiloxane using atmospheric pressure thermal microplasma jet , 2019, Thin Solid Films.

[9]  Q. Trinh,et al.  Robust hydrophobic coating on glass surface by an atmospheric-pressure plasma jet for plasma-polymerisation of hexamethyldisiloxane conjugated with (3-aminopropyl) triethoxysilane , 2018, Surface Engineering.

[10]  M. Kiuchi,et al.  Identification of fragment ions produced from hexamethyldisilazane and production of low-energy mass-selected fragment ion beam , 2018, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

[11]  M. Kiuchi,et al.  Low-energy mass-selected ion beam production of fragments from tetraethylorthosilicate for the formation of silicon dioxide film , 2018 .

[12]  M. Kiuchi,et al.  Injected ion energy dependence of SiC film deposited by low-energy SiC 3 H 9 + ion beam produced from hexamethyldisilane , 2018 .

[13]  M. Kiuchi,et al.  Low-energy mass-selected ion beam production of fragments produced from hexamethyldisiloxane for the formation of silicon oxide film , 2017 .

[14]  Shaoning Lu,et al.  Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia , 2017 .

[15]  M. Kiuchi,et al.  Low-energy SiC2H6+ and SiC3H9+ ion beam productions by the mass-selection of fragments produced from hexamethyldisilane for SiC film formations , 2016 .

[16]  M. Kiuchi,et al.  Low-Energy Mass-Selected Ion Beam Production of Fragments Produced from Hexamethyldisilane for SiC Film Formation , 2016 .

[17]  M. Kiuchi,et al.  Sputtering yields and surface modification of poly(methyl methacrylate) (PMMA) by low-energy Ar+/ ion bombardment with vacuum ultraviolet (VUV) photon irradiation , 2012 .

[18]  M. Nishitani,et al.  Experimental evaluation of CaO, SrO and BaO sputtering yields by Ne+ or Xe+ ions , 2011 .

[19]  G. Yeom,et al.  Characteristics of SiOx thin films deposited by atmospheric pressure chemical vapor deposition as a function of HMDS/O2 flow rate , 2010 .

[20]  F. Palumbo,et al.  Thin Film Deposition in Capacitively Coupled Plasmas Fed with Bis(dimethylamino)dimethylsilane and Oxygen: An FTIR study , 2009 .

[21]  J. Benedikt,et al.  Deposition of carbon-free silicon dioxide from pure hexamethyldisiloxane using an atmospheric microplasma jet , 2008 .

[22]  Shinji Matsui,et al.  Focused-ion-beam deposition for 3-D nanostructure fabrication , 2007 .

[23]  K. Lang,et al.  Characterization of SiO2 thin films prepared by plasma-activated chemical vapour deposition , 2006 .

[24]  M. Kiuchi,et al.  Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires , 2006 .

[25]  M. Hitchman,et al.  Remote AP‐PECVD of Silicon Dioxide Films from Hexamethyldisiloxane (HMDSO) , 2005 .

[26]  Takao Suzuki,et al.  Ion-beam-induced chemical-vapor deposition of FePt and CoPt particles , 2005 .

[27]  Takaomi Matsutani,et al.  Deposition of SiO2 films by low-energy ion-beam induced chemical vapor deposition using hexamethyldisiloxane , 2004 .

[28]  Liang-Yih Chen,et al.  Surface tension studies of (Si, N)-containing diamond-like carbon films deposited by hexamethyldisilazane , 2003 .

[29]  P. I. John,et al.  Electronic structure of carbon-free silicon oxynitride films grown using an organic precursor hexamethyl-disilazane , 2002 .

[30]  M. Pérez-Sánchez,et al.  Corrosion resistant ZrO2 thin films prepared at room temperature by ion beam induced chemical vapour deposition , 2002 .

[31]  Paul A. Kohl,et al.  Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Deposited at Low Temperatures , 1995 .

[32]  J. P. Espinós,et al.  Preparation of TiO2 and Al2O3 thin films by ion-beam induced chemical vapour deposition , 1994 .

[33]  J. Theil,et al.  Carbon content of silicon oxide films deposited by room temperature plasma enhanced chemical vapor deposition of hexamethyldisiloxane and oxygen , 1994 .

[34]  J. P. Espinós,et al.  Ion beam induced chemical vapor deposition for the preparation of thin film oxides , 1994 .

[35]  P. Favia,et al.  Plasma and surface diagnostics in PECVD (plasma-enhanced chemical vapor deposition) from silicon containing organic monomers , 1994 .

[36]  P. Favia,et al.  Thin film deposition in glow discharges fed with hexamethyldisilazane-oxygen mixtures , 1993 .

[37]  K. Ebihara,et al.  Silicon oxide film preparation by RF plasma-enhanced MOCVD using hexamethyldisiloxane , 1993 .

[38]  Y. Yoshida,et al.  Hybrid Films Formed from Hexamethyldisiloxane and SiO by Plasma Process , 1991 .