论文信息 - A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices - 字舞流文

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

C. Wen | Wengang Wu | Maojun Wang | B. Xie | Jinyan Wang | Y. Hao | Bo Shen | K. Cheng | Min Yu | Jun Xu | M. Tao | Shuxun Lin | Fei Sang | M. Yu | B. Shen