Optical gain and linewidth enhancement factor in bulk GaN

Optical gain and the linewidth enhancement factor (or parameter) are calculated for bulk GaN. The results obtained using an interacting carrier model are compared with the ones derived from a free carrier theory. The Coulomb interaction leads to an enhancement of the gain and to a decrease of the parameter in the gain region. For the model including Coulomb interaction, the parameter for GaN at peak gain is in the range 1.7-1.9 at 300 K for carrier densities between 1.0 and 1.4 ? 1019 cm-3, which implies weak anti-guiding in this material. A discussion of the material parameters is included.

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