Ionized-Cluster Beam Depositon and Epitaxy

The ionized cluster beam (ICB) deposition and epitaxial process is an ion-assisted technique by which high quality films of metals, dielectrics and active semiconductor materials can be formed at a low substrate temperature in a technical-grade vacuum system. In the ICB process, film material is vaporized from a confinement crucible under conditions which result in the formation of aggregate clusters of atoms held together by weak forces. Clusters can be ionized by electron impact and subsequently accelerated by high potentials. Through selection of available parameters, it is possible to control the average energy of depositing species over the range from thermal ejection to above 100 eV per atom. It is within this range that optimum conditions for film growth are generally achieved. In the ICB deposition, characteristics of the deposition are mainly caused by both the structural characteristic of the clusters and the effects of ionization and acceleration of the clusters.

[1]  T. Takagi,et al.  Optical and thermal properties of BeO thin films prepared by reactive ionized‐cluster beam technique , 1980 .

[2]  J. Theeten,et al.  Cadmium telluride layer deposition using the ionized cluster beam technique , 1977 .

[3]  James W. Mayer,et al.  Ion implantation in semiconductors , 1973 .

[4]  G. Stein.  Atoms and molecules in small aggregates , 1979 .

[5]  T. Takagi,et al.  Ionized-cluster beam epitaxy , 1978 .

[6]  R. Farrow,et al.  Molecular beam epitaxy and field emission deposition for metal film growth on III–V compound semiconductors—A comparative study , 1979 .

[7]  E. Loh.  Ultraviolet reflectance of Al2O3, SiO2 and BeO , 1964 .

[8]  T. Takagi,et al.  Crystalline and Electrical Characteristics of Silicon Films Deposited by Ionized-Cluster-Beams , 1980 .

[9]  L. H. Johnston,et al.  Infrared Transmittance and Reflectance of Beryllium Oxide , 1962 .

[10]  T. Takagi,et al.  Ionized-cluster beam deposition and epitaxy as fabrication techniques for electron devices☆ , 1977 .

[11]  E. Hirsch,et al.  The effect of ion irradiation on the adherence of germanium films , 1978 .

[12]  T. Takagi,et al.  Properties of ZnO films prepared by reactive ionized cluster beam deposition , 1979 .

[13]  T. Takagi,et al.  An evaluation of metal and semiconductor films formed by ionized-cluster beam deposition , 1976 .

[14]  T. Takagi,et al.  Vaporized-metal cluster formation and ionized-cluster beam deposition and epitaxy☆ , 1981 .

[15]  Bj Hopkins,et al.  Adsorption of methane, ethane and propane on the (100) face of a tungsten single crystal , 1972 .

[16]  Maria Telkes,et al.  Solar Thermoelectric Generators , 1954 .

[17]  O. Hagena.  Scaling laws for condensation in nozzle flows , 1974 .

[18]  R. E. Leckenby,et al.  Condensation embryos in an expanding gas beam , 1964, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[19]  J. Callaway.  Model for Lattice Thermal Conductivity at Low Temperatures , 1959 .

[20]  J. A. Van Vechten,et al.  Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition Energies , 1969 .

[21]  J. A. Barker,et al.  Theory and Monte Carlo simulation of physical clusters in the imperfect vapor , 1973 .

[22]  S. Ushio,et al.  Contact and interconnect formation on compound semiconductor devices by ionized-cluster beam deposition , 1976 .

[23]  T. Takagi,et al.  Mn-implanted ZnS thin-film electroluminescent device , 1973 .

[24]  D. Chen,et al.  MnBi films for magnetooptic recording , 1973 .

[25]  J. Pankove,et al.  OPTICAL ABSOPTION OF GaN , 1970 .

[26]  G. Stein,et al.  Light-scattering experiments and theory of homogeneous nucleation in condensing supersonic flow , 1969 .

[27]  M. Guseva,et al.  Effect of ion irradiation on the formation, structure and properties of thin metal films , 1976 .

[28]  D. A. Berlincourt,et al.  Polar Properties of BeO Single Crystals , 1963 .

[29]  T. Takagi,et al.  Characteristics of thin films formed by the ionized-cluster beam technique , 1978 .

[30]  T. Takagi,et al.  Ionized-Cluster Beam Deposition , 1975 .