论文信息 - Bulk damage caused by single protons in SDRAMs

Bulk damage caused by single protons in SDRAMs

A new failure mode that is attributable to the bulk damage caused by single protons has been reported in 256-Mbit SDRAMs. The refresh rate required to retain memorized data was measured as a typical parameter to detect the effect. We performed the proton irradiation test and discussed results regarding the influence of this failure.

Sumio Matsuda | N. Ikeda | H. Shindou | S. Kuboyama | Toshio Hirao

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