An 0.3- m Si Epitaxial Base BiCMOS Technology with 37-GHz and 10-V BV for RF Telecommunication

In this paper, an 0.3- m BiCMOS technology for mixed analog/digital application is presented. A typical emitter area of this technology is m m. This technology includes high of 37 GHz at the low collector current of 300 A and high BV of 10 V NPN transistor, CMOS with m, and passive elements. By using the shallow and deep trench isolation technology and nonselective epitaxial intrinsic base, the can be reduced to 1.6 fF, which is the lowest value reported so far. As a results, we have managed to obtain the high at the low current region and high BV concurrently. These features will contribute to the development of high- performance BiCMOS LSI's for various mixed analog/digital applications.

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