Sub-micron texturing of silicon wafer with fiber laser

Laser texturing is extensively investigated for modifying surface properties. A continuous wave (CW) fiber laser (λ= 1090nm) was used to pattern a silicon wafer surface in ambient and O2 atmosphere respectively. The O2 gas stream was delivered through a coaxial nozzle to the laser spot. Characterization of the patterned features was carried out by surface profiling, scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS or EDX), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Formation of laser-induced silicon oxide sub-micron bumps was observed, which were analyzed and shown to cause changes in surface wetability and reflectivity.

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