论文信息 - Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory

Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory

The effect of a sacrificial layer residue on a cantilever beam in the nano-electro-mechanical nonvolatile memory is investigated for the optimization of reliability characteristics. Different from previous research, pull in voltage model of nano-electro-mechanical nonvolatile memory used triangular residue layer which is considered by real wet etching process. Modified pull in voltage model was investigated with triangular shape sacrificial layer residue. Keyword Nano Electro Mechanical Nonvolatile Memory, pull in voltage

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