Demonstration of 184 and 255-GHz Amplifiers Using InP HBT Technology

In this letter, 184 and 255 GHz single-stage heterojunction bipolar transistor (HBT) amplifiers are reported. Each amplifier uses a single-emitter 0.4 ¿m 15 ¿m InP HBT device with maximum frequency of oscillation (fmax) greater than 500 GHz and of 200 GHz. The 183 GHz single-stage amplifier has demonstrated gain of 4.3 ± 0.4 dB for all sites on the wafer. The 255 GHz amplifier has measured gain of 3.5d B and demonstrates the highest frequency measured HBT amplifier gain reported to date. Both amplifiers show excellent agreement with original simulation.

[1]  P. Siegel.  Terahertz Technology , 2001 .

[2]  M. Urteaga,et al.  G-band (140-220-GHz) InP-based HBT amplifiers , 2003, IEEE J. Solid State Circuits.

[3]  Munkyo Seo,et al.  G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers , 2005, IEEE Transactions on Microwave Theory and Techniques.

[4]  R. Grundbacher,et al.  Beyond G-band: a 235 GHz InP MMIC amplifier , 2005, IEEE Microwave and Wireless Components Letters.

[5]  A.K. Fung,et al.  On-Wafer Vector Network Analyzer Measurements in the 220-325 GHz Frequency Band , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

[6]  M. Barsky,et al.  35-nm InP HEMT SMMIC Amplifier With 4.4-dB Gain at 308 GHz , 2007, IEEE Electron Device Letters.

[7]  A. Leuther,et al.  Metamorphic H-Band Low-Noise Amplifier MMICs , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[8]  M. Barsky,et al.  A 245-GHz MMIC Amplifier with 80-μm Output Periphery and 12-dB Gain , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[9]  M. Barsky,et al.  Demonstration of a 270-GHz MMIC Amplifier Using 35-nm InP HEMT Technology , 2007, IEEE Microwave and Wireless Components Letters.

[10]  D. Sawdai,et al.  Demonstration of a 311-GHz Fundamental Oscillator Using InP HBT Technology , 2007, IEEE Transactions on Microwave Theory and Techniques.