论文信息 - SP-SOI: a third generation surface potential based compact SOI MOSFET Model

SP-SOI: a third generation surface potential based compact SOI MOSFET Model

We report the first SOI MOSFET model that takes advantage of the recent progress in bulk MOSFET modeling. The surface-potential-based model is implemented without iterative loops, and includes physical modeling of the moderate inversion region and all small-geometry effects without relying on the traditional threshold-voltage-based formulation. The new model is verified for a 90 nm node process (40 nm polysilicon length) and is implemented in a circuit simulator

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