论文信息 - IMPACT OF GATE POLYSILICON INTERFACE ON CARRIER TRAPPING LOW FREQUENCY NOISE IN ADVANCED MOSFET'S

IMPACT OF GATE POLYSILICON INTERFACE ON CARRIER TRAPPING LOW FREQUENCY NOISE IN ADVANCED MOSFET'S

In this work, we calculate, for the first time, the impact of carrier trapping at the gate polysilicon/oxide interface on the LF noise characteristics of polygate MOSFET's. After extending the channel LF noise analysis, based on carrier number and correlated mobility fluctuations approaches, to include charge variations at the polySi/oxide interface, we derive analytical expressions accounting for the impact of fluctuations of poly/oxide interfacial charge on the channel drain current and input gate voltage noise as a function of gate bias, polysilicon doping concentration and gate oxide thickness.

[1] N. Arora,et al. Modeling the polysilicon depletion effect and its impact on submicrometer CMOS circuit performance , 1995 .

[2] C. Hu,et al. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .

[3] Gerard Ghibaudo,et al. Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors , 1991 .

[4] I. Lundström,et al. Low frequency noise in MOS transistors—I Theory , 1968 .

[5] Yael Nemirovsky,et al. 1/f Noise in CMOS transistors for analog applications from subthreshold to saturation , 1998 .

[6] W. Budde,et al. A SOI-RF-CMOS technology on high resistivity SIMOX substrates for microwave applications to 5 GHz , 1997 .

[7] G. Ghibaudo,et al. Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films , 1996, IEEE Electron Device Letters.

[8] Gerard Ghibaudo,et al. A simple derivation of Reimbold's drain current spectrum formula for flicker noise in MOSFETs , 1987 .

[9] G. Reimbold,et al. Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states , 1984, IEEE Transactions on Electron Devices.