60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs
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I. Adesida | O. Aktas | A. Kuliev | V. Kumar | R. Schwindt | S. Toshkov | D. Costescu | J. Stubbins | Vipan Kumar
[1] H.-L.A. Hung,et al. Total dose and transient radiation effects on GaAs MMICs , 1988 .
[2] Van de Walle CG,et al. Atomic geometry and electronic structure of native defects in GaN. , 1994, Physical review. B, Condensed matter.
[3] Briggs,et al. Native defects in gallium nitride. , 1995, Physical review. B, Condensed matter.
[4] D. C. Reynolds,et al. Defect Donor and Acceptor in GaN , 1997 .
[6] A. N. Smirnov,et al. Point defects in gamma-irradiated n-GaN , 2000 .
[7] Umesh K. Mishra,et al. Very-high power density AlGaN/GaN HEMTs , 2001 .
[8] Amir Dabiran,et al. dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors , 2001 .
[9] Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures , 2001 .
[10] L. Faraone,et al. 60Co gamma-irradiation-induced defects in n-GaN , 2002 .
[11] Hadis Morkoç,et al. GaN-based modulation doped FETs and UV detectors , 2002 .
[12] Amir Dabiran,et al. Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors , 2002 .
[13] G. Simin,et al. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz , 2002, IEEE Electron Device Letters.
[14] L. Eastman,et al. Effects of γ‐irradiation on AlGaN/GaN‐based HEMTs , 2003 .