Structural and electrical properties of Si layers implanted with various Ge ion doses
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[1] A. Borghesi,et al. Damage analysis and optical properties of Ge‐implanted silicon , 1990 .
[2] T. Finstad,et al. Structural and electrical properties of B‐ and Ge‐implanted Si , 1989 .
[3] S. Aoki,et al. Structural and electrical properties of Ge-ion-implanted Si layer , 1989 .
[4] J. R. Ayres,et al. Comparison of electrical defects in Ge+ and Si+ preamorphized BF2‐implanted silicon , 1987 .
[5] A. Ajmera,et al. Elimination of end‐of‐range and mask edge lateral damage in Ge+ preamorphized, B+ implanted Si , 1986 .
[6] C. Pai,et al. Comparison of electronic effects and stress effects in enhancing regrowth rate of ion-implanted amorphous Si , 1985 .
[7] W. Maszara,et al. Germanium Implantation into Silicon An Alternate Pre‐Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction Formation , 1984 .
[8] P. Révész,et al. Regrowth Behaviour of Ge Implanted Si , 1979 .
[9] T. Sigmon,et al. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si , 1978 .
[10] J. C. Phillips,et al. Bonds and Bands in Semiconductors , 1970, Science.
[11] M. Y. Tsai,et al. Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF + 2 -implanted silicon , 1979 .