High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers
暂无分享,去创建一个
Vahid Mohammadi | Negin Golshani | Lis K. Nanver | Siva Ramesh | L. Nanver | S. Ramesh | N. Golshani | V. Mohammadi
[1] J. Derakhshandeh,et al. High-Efficiency Silicon Photodiode Detector for Sub-keV Electron Microscopy , 2012, IEEE Transactions on Electron Devices.
[2] Shahriar Mirabbasi,et al. A technique for implementing monolithic resistors with near-zero temperature coefficient , 2011, 2011 24th Canadian Conference on Electrical and Computer Engineering(CCECE).
[3] L. Nanver,et al. Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition , 2012 .
[4] Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates , 2006, 2006 IEEE International Conference on Microelectronic Test Structures.
[5] Francesco Sarubbi,et al. High Effective Gummel Number of CVD Boron Layers in Ultrashallow $\hbox{p}^{+}\hbox{n}$ Diode Configurations , 2010, IEEE Transactions on Electron Devices.
[6] T.C. Hu,et al. Mis-matching characteristics study of P+-poly-silicon resistor in newly CMOS process technology , 2007, 2007 IEEE Conference on Electron Devices and Solid-State Circuits.
[7] Lis K. Nanver,et al. Chemical Vapor Deposition of α-Boron Layers on Silicon for Controlled Nanometer-Deep p+n Junction Formation , 2010 .
[8] Florian Schopper,et al. The first measurements on SiPMs with bulk integrated quench resistors , 2011 .
[9] Lei Shi,et al. Electrical and Optical Performance Investigation of Si-Based Ultrashallow-Junction $\hbox{p}^{+}\hbox{-}\hbox{n}$ VUV/EUV Photodiodes , 2012, IEEE Transactions on Instrumentation and Measurement.
[10] L.E. Larson,et al. Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems , 2009, IEEE Transactions on Microwave Theory and Techniques.
[11] L. Nanver,et al. (Invited) Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices , 2012 .