论文信息 - (Invited) First-Principles Studies of the Defect Formation in III-V FETs Grown by Fin Replacement Method - 字舞流文

(Invited) First-Principles Studies of the Defect Formation in III-V FETs Grown by Fin Replacement Method

Eddy Simoen | Niamh Waldron | Geoffrey Pourtois | Matty Caymax | Clement Merckling | Sijia Jiang | Shinichi Yoshida | Ken Sawada | Nadine Collaert | Masashi Nakazawa | Hideki Minari | Weiming Guo | D. Lin