Low-Side GaN Power Device Dynamic Ron Characteristics Under Different Substrate Biases

Dynamic on-resistance $(\pmb{R}_{on})$ characteristics of low-side GaN-on-Si power devices under different substrate biases are investigated. Multiple-pulse techniques have been applied to mimic the monolithically integrated half-bridge GaN power switching conditions. Compared with the grounded substrate, a negative substrate bias not only yields asymmetric vertical leakage, but also induces distinct injected electrons to interact with the buffer traps. Pulse-mode substrate bias is also studied to suppress dynamic $\pmb{R}_{on}$ degradation due to elimination of back-gating effect. A novel mitigation technique is proposed and verified by experiments.

[1]  Kazutoshi Kobayashi,et al.  Monolithically Integrated E-mode GaN-on-SOI Gate Driver with Power GaN-HEMT for MHz-Switching , 2018, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

[2]  W. Yeh,et al.  C-V Measurement under Different Frequencies and Pulse-mode Voltage Stress to Reveal Shallow and Deep Trap Effects of GaN HEMTs , 2018, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

[3]  Gaudenzio Meneghesso,et al.  Correlation between dynamic Rdsou transients and Carbon related buffer traps in AlGaN/GaN HEMTs , 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

[4]  Xu Yang,et al.  An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration , 2017, IEEE Transactions on Power Electronics.

[5]  Alex Q. Huang,et al.  Power Semiconductor Devices for Smart Grid and Renewable Energy Systems , 2017, Proceedings of the IEEE.

[6]  B. J. Baliga,et al.  Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA) , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[7]  Kevin J. Chen,et al.  GaN‐to‐Si vertical conduction mechanisms in AlGaN/GaN‐on‐Si lateral heterojunction FET structures , 2014 .

[8]  D. Ji,et al.  Switching performance analysis of GaN OG-FET using TCAD device-circuit-integrated model , 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

[9]  Yoshihiro Sato,et al.  GaN Power Transistors on Si Substrates for Switching Applications , 2010, Proceedings of the IEEE.

[10]  S. Decoutere,et al.  Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs , 2014, IEEE Electron Device Letters.

[11]  Reinhard Herzer,et al.  Characterization of GaN-HEMT in cascode topology and comparison with state of the art-power devices , 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

[12]  Kevin J. Chen,et al.  Dynamic $R_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination , 2017, IEEE Electron Device Letters.

[13]  Shu Yang,et al.  Buffer trapping-induced RON degradation in GaN-on-Si power transistors: Role of electron injection from Si substrate , 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

[14]  Rongming Chu,et al.  High performance GaN-on-Si power switch: Role of substrate bias in device characteristics , 2011, 69th Device Research Conference.

[15]  Kevin J. Chen,et al.  High-speed, high-reliability GaN power device with integrated gate driver , 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

[16]  V. Huard,et al.  On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[17]  Shu Yang,et al.  Fabrication and Characterization of Enhancement-Mode High- $\kappa~{\rm LaLuO}_{3}$-AlGaN/GaN MIS-HEMTs , 2013, IEEE Transactions on Electron Devices.

[18]  Shu Yang,et al.  Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform , 2014, IEEE Transactions on Electron Devices.

[19]  G. Meneghesso,et al.  Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[20]  Oliver Ambacher,et al.  Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-Chip , 2017, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

[21]  Shu Yang,et al.  GaN-on-Si lateral power devices with symmetric vertical leakage: The impact of floating substrate , 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).