Copper metallization for ULSL and beyond

Abstract The investigation of copper for use as an interconnection metal in the ultra large-scale integration (ULSI) era of silicon integrated circuits has accelerated in the past several years. The obvious advantages for using copper to replace currently used Al are related to its lower resistivity (1.7 μΩ-cm vs. 2.7 μω-cm for Al) and its higher electromigration resistance (several orders of magnitude higher compared with Al). The goal of this review is to examine the properties of copper and its applicability as the interconnection metal. A comparison of electromigration behavior of various possible interconnection metal in standard “bulk” state is made. This is followed by a review of the calculations made comparing (a) the RC (resistance × capacitance) time constants of various material systems and (b) the joule heating of the interconnection materials. A comparative study of various metal systems for the application as the interconnect metal is then made. These discussions will clearly establish the ...

[1]  J. Steigerwald,et al.  Effect of Copper Ions in the Slurry on the Chemical‐Mechanical Polish Rate of Titanium , 1994 .

[2]  B. Arcot,et al.  Intermetallic formation in copper/magnesium thin films—kinetics, nucleation and growth, and effect of interfacial oxygen , 1994 .

[3]  Mao-chieh Chen,et al.  Thermal Stability of Cu / CoSi2 Contacted p+n Shallow Junction with and without TiW Diffusion Barrier , 1994 .

[4]  Ronald J. Gutmann,et al.  Pattern Geometry Effects in the Chemical‐Mechanical Polishing of Inlaid Copper Structures , 1994 .

[5]  Y. Arita,et al.  Copper Metallization Technology for Deep Submicron ULSIs , 1994 .

[6]  A. Gelatos,et al.  Chemical Vapor Deposition of Copper for Advanced On-Chip Interconnects , 1994 .

[7]  T. H. Baum,et al.  Chemical Vapor Deposition of Copper for IC Metallization: Precursor Chemistry and Molecular Structure , 1994 .

[8]  C. Mak.  Electro less Copper Deposition on Metals and Metal Suicides , 1994 .

[9]  Shizhi Wang,et al.  Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide , 1994 .

[10]  W. Lanford,et al.  Oxidation resistant high conductivity copper films , 1994 .

[11]  H. Bergh,et al.  Selectivity in low pressure chemical vapor deposition of copper from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane in the presence of water , 1994 .

[12]  J. Bravman,et al.  Thermal Stresses in Passivated Copper Interconnects Determined by X-Ray Analysis and Finite Element Modeling , 1994 .

[13]  Mi-Chang Chang,et al.  Process Integration and Manufacturasility Issues for High Performance Multilevel Interconnect , 1994 .

[14]  Hidekazu Okabayashi,et al.  Stress-induced void formation in metallization for integrated circuits , 1993 .

[15]  R. Marsh,et al.  Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor , 1993 .

[16]  J. M. Cech,et al.  Relationship of crystallographic orientation and impurities to stress, resistivity, and morphology for sputtered copper films , 1993 .

[17]  K. Suguro,et al.  Self‐aligned passivation on copper interconnection durability against oxidizing ambient annealing , 1993 .

[18]  William G. Oldham,et al.  Copper transport in thermal SiO2 , 1993 .

[19]  W. Lanford,et al.  Annealing of boron‐implanted corrosion resistant copper films , 1993 .

[20]  Y. Arita,et al.  Al–Cu Alloy Etching Using In-Reactor Aluminum Chloride Formation in Static Magnetron Triode Reactive Ion Etching , 1993 .

[21]  Ho-Kyu Kang,et al.  Electroless Cu for VLSI , 1993 .

[22]  Mark J. Hampden-Smith,et al.  Copper Etching: New Chemical Approaches , 1993 .

[23]  Alain E. Kaloyeros,et al.  Chemical Vapor Deposition of Copper for Multilevel Metallization , 1993 .

[24]  Ronald J. Gutmann,et al.  Inlaid Copper Multilevel Interconnections Using Planarization by Chemical-Mechanical Polishing , 1993 .

[25]  D. B. Knorr,et al.  Texture and microstructure of thin copper films , 1993 .

[26]  J. Tao,et al.  Electromigration characteristics of copper interconnects , 1993, IEEE Electron Device Letters.

[27]  Tadashi Shibata,et al.  Evaluating the Large Electromigration Resistance of Copper Interconnects Employing a Newly Developed Accelerated Life‐Test Method , 1993 .

[28]  Shizhi Wang,et al.  Diffusion barrier properties of TiW between Si and Cu , 1993 .

[29]  Z. Öztürk,et al.  Influence of grain-boundary and surface scattering on the electrical resistivity of single-layered thin copper films , 1993 .

[30]  T. Marieb,et al.  Non-Destructive Evaluation of Strains and Voiding in Passgvated Copper Metallizations , 1993 .

[31]  E. Eisenbraun,et al.  Ultra Thin Sacrificial Diffusion Barriers - Control of Diffusion Across the Cu-SiO 2 Interface , 1993 .

[32]  S. P. Murarka,et al.  Metallization: Theory and practice for VLSI and ULSI , 1992 .

[33]  Jian Li,et al.  Copper deposition and thermal stability issues in copper-based metallization for ULSI technology , 1992 .

[34]  K. Chi,et al.  Control of selectivity during chemical vapor deposition of copper from copper (I) compounds via silicon dioxide surface modification , 1992 .

[35]  E. Eisenbraun,et al.  Device‐quality copper using chemical vapor deposition of β‐diketonate source precursors in liquid solution , 1992 .

[36]  K. Srikrishnan,et al.  Copper diffusion in amorphous thin films of 4% phosphorus‐silcate glass and hydrogenated silicon nitride , 1992 .

[37]  J. 0. Olowolafe,et al.  Interdiffusions in Cu/reactive‐ion‐sputtered TiN, Cu/chemical‐vapor‐deposited TiN, Cu/TaN, and TaN/Cu/TaN thin‐film structures: Low temperature diffusion analyses , 1992 .

[38]  William D. Nix,et al.  A study of stress-driven diffusive growth of voids in encapsulated interconnect lines , 1992 .

[39]  W. Lanford,et al.  Passivation of copper by silicide formation in dilute silane , 1992 .

[40]  W. Lanford,et al.  Interactions and Stability of Cu on CoSi 2 , 1992 .

[41]  W. Lanford,et al.  Stability of Sputter Deposited Al-Cu Bilayers on SiO 2 . , 1992 .

[42]  S. Raud,et al.  Performance of W100−xNx diffusion barriers between 〈Si〉 and Cu , 1991 .

[43]  D. J. Pearson,et al.  Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects , 1991 .

[44]  J. S. Chen,et al.  Amorphous Ta-Si-N diffusion barriers in Si/Al and Si/Cu metallizations , 1991 .

[45]  D. Shih,et al.  Thin‐film interdiffusions in Cu/Pd, Cu/Pt, Cu/Ni, Cu/NiB, Cu/Co, Cu/Cr, Cu/Ti, and Cu/TiN bilayer films: Correlations of sheet resistance with Rutherford backscattering spectrometries , 1991 .

[46]  Evan G. Colgan,et al.  Oxidation and protection in copper and copper alloy thin films , 1991 .

[47]  C. Steinbrüchel,et al.  Reactive ion etching of copper in SiCl4‐based plasmas , 1991 .

[48]  J. S. Chen,et al.  Tantalum‐based diffusion barriers in Si/Cu VLSI metallizations , 1991 .

[49]  Paul A. Flinn,et al.  Measurement and interpretation of stress in copper films as a function of thermal history , 1991 .

[50]  S. Wong,et al.  Copper Interconnection with Tungsten Cladding for UlSI , 1991, 1991 Symposium on VLSI Technology.

[51]  T. Shibata,et al.  Formation of Copper Thin Films by a Low Kinetic Energy Particle Process , 1991 .

[52]  Y. Shacham-Diamand.  100 nm wide copper lines made by selective electroless deposition , 1991 .

[53]  Evan G. Colgan,et al.  Effects of oxygen in TiNx on the diffusion of Cu in Cu/TiN/Al and Cu/TiNx/Si structures , 1991 .

[54]  C. Apblett,et al.  Effect of Hydrogen on Thin Cu/Ti and Cu Films , 1991 .

[55]  J. Armor,et al.  Oxidation protection for a variety of transition metals and copper via surface silicides formed with silane containing atmospheres , 1991 .

[56]  S. Pearton.  Chapter 5 Neutralization of Deep Levels in Silicon , 1991 .

[57]  J. Pankove,et al.  Hydrogen in semiconductors , 1991 .

[58]  J. 0. Olowolafe,et al.  Interactions of Cu with CoSi2, CrSi2 and TiSi2 with and without TiNx barrier layers , 1990 .

[59]  Ki-Bum Kim,et al.  Reactively sputtered TiN as a diffusion barrier between Cu and Si , 1990 .

[60]  J. D. Farr,et al.  Chemical vapor deposition of copper from copper(I) trimethylphosphine compounds , 1990 .

[61]  K. Holloway,et al.  Tantalum as a diffusion barrier between copper and silicon , 1990 .

[62]  B. Blanpain,et al.  Interaction of cu with cosi2 with and without tinx barrier layers , 1990 .

[63]  P. Madakson,et al.  Interdiffusion and resistivity of Cu/Au, Cu/Co, Co/Au, and Cu/Co/Au thin films at 25–550 °C , 1990 .

[64]  Chin-An Chang.  Reaction between Cu and PtSi with Cr, Ti, W, and C barrier layers , 1990 .

[65]  Chao Hu,et al.  Low-temperature chemical vapor deposition of high purity copper from an organometallic source , 1990 .

[66]  T. Lu,et al.  Low‐resistivity Cu thin‐film deposition by self‐ion bombardment , 1990 .

[67]  W. Yoo,et al.  Reactive Ion Etching of Copper with SiCl 4 and CCl 2 F 2 , 1990 .

[68]  K. Holloway,et al.  Tantalum and Tantalum Nitride as Diffusion Barriers Between Copper and Silicon , 1990 .

[69]  W. Lanford,et al.  Interaction of Cu and CoSi 2 , 1990 .

[70]  W. Lanford,et al.  Interaction of Copper Film with Silicides , 1990 .

[71]  Chin-An Chang.  Thermal stability of the Cu/Pd/Si metallurgy , 1989 .

[72]  Chin-An Chang.  Thermal stability of the Cu/PtSi metallurgy , 1989 .

[73]  Hans Cerva,et al.  Impact of copper contamination on the quality of silicon oxides , 1989 .

[74]  P. Engel,et al.  Principles of electronic packaging , 1989 .

[75]  S. P. Murarka,et al.  Diffusion Barriers - For Thin Film Metallizations , 1991 .

[76]  E. J. Rymaszewski,et al.  Microelectronics Packaging Handbook , 1988 .

[77]  P. Flinn,et al.  A new x‐ray diffractometer design for thin‐film texture, strain, and phase characterization , 1988 .

[78]  Tadahiro Ohmi,et al.  Room‐temperature copper metallization for ultralarge‐scale integrated circuits by a low kinetic‐energy particle process , 1988 .

[79]  F. Ohuchi,et al.  Summary Abstract: Ti as a diffusion barrier between Cu and polyimide , 1988 .

[80]  M. J. Brett.  Structural transitions in ballistic aggregation simulation of thin‐film growth , 1988 .

[81]  Joseph Alison King.  Materials handbook for hybrid microelectronics , 1988 .

[82]  Lawrence H. Bennett,et al.  Binary alloy phase diagrams , 1986 .

[83]  G. Schwartz,et al.  Reactive Ion Etching of Copper Films , 1983 .

[84]  K. Mittal.  Physicochemical Aspects of Polymer Surfaces , 1983 .

[85]  T. Takagi.  Development of New Materials by Ionized-Cluster Beam Technique , 1983 .

[86]  M. Ashby,et al.  Deformation-Mechanism Maps: The Plasticity and Creep of Metals and Ceramics , 1982 .

[87]  M. Chamberlain.  Diffusion of copper in thin TiN films , 1982 .

[88]  A.K. Sinha,et al.  Speed limitations due to interconnect time constants in VLSI integrated circuits , 1982, IEEE Electron Device Letters.

[89]  K.C. Saraswat,et al.  Effect of scaling of interconnections on the time delay of VLSI circuits , 1982, IEEE Transactions on Electron Devices.

[90]  A. Gangulee,et al.  Electromigration in gold and copper thin film conductors , 1980 .

[91]  M.-A. Nicolet,et al.  Diffusion barriers in thin films , 1978 .

[92]  R. Sievers,et al.  Volatile Metal Complexes , 1978, Science.

[93]  C. S. Hartley,et al.  Constitutive Equations in Plasticity , 1977 .

[94]  A. Gangulee,et al.  Electrotransport in copper alloy films and the defect mechanism in grain boundary diffusion , 1975 .

[95]  H. B. Huntington.  6 – Electromigration in Metals , 1975 .

[96]  A. Nowick,et al.  Diffusion in solids: recent developments , 1975 .

[97]  A. T. Fromhold.  Theory of metal oxidation , 1975 .

[98]  A. G. Milnes,et al.  Deep impurities in semiconductors , 1973 .

[99]  R. C. Weast.  Handbook of chemistry and physics , 1973 .

[100]  R. Glang,et al.  Handbook of Thin Film Technology , 1970 .

[101]  M. Shatzkes,et al.  Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External Surfaces , 1970 .

[102]  C. J. Smithells,et al.  Smithells metals reference book , 1949 .

[103]  G. Parkes.  Mellor's modern inorganic chemistry , 1939 .