Four-component superlattice empirical pseudopotential method for InAs/GaSb superlattices

Abstract For the design of InAs/GaSb superlattice (SL) heterojunction infrared photodetectors with very low dark current we have extended the standard two-component superlattice empirical pseudopotential method (SEPM) and implemented a four-component model including interface layers. For both models, the calculated bandgap values for a set of SL samples are compared to bandgaps determined by photoluminescence measurements. While the bandgap resulting from the two-component model agrees well with experimental data for SL structures with individual layer thicknesses of 7 monolayers and more, we show that for SLs with thinner GaSb layers the four-component SEPM model is accurate, when the As-content in the interface and barrier layers is included in the model.

[1]  Jerry R. Meyer,et al.  Band parameters for III–V compound semiconductors and their alloys , 2001 .

[2]  Alex Zunger,et al.  Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices , 2002 .

[3]  T. K. Bergstresser,et al.  Electronic Structures of Semiconductor Alloys , 1970 .

[4]  Yajun Wei,et al.  Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering , 2004 .

[5]  H. S. Kim,et al.  nBn structure based on InAs /GaSb type-II strained layer superlattices , 2007 .

[6]  Frank Rutz,et al.  InAs/GaSb superlattice infrared detectors , 2013 .

[7]  M. L. Tilton,et al.  Comparing pseudopotential predictions for InAs/GaSb superlattices , 2002 .

[8]  J. Zuo,et al.  Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study , 2013 .

[9]  G. Bastard,et al.  Superlattice band structure in the envelope-function approximation , 1981 .

[10]  Wavelength tuning predictions and experiments for type II antimonide lasers , 2008 .

[11]  Jeffrey H. Warner,et al.  Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes , 2006 .

[12]  D. Ting,et al.  A high-performance long wavelength superlattice complementary barrier infrared detector , 2009 .

[13]  Elena Plis,et al.  Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers , 2010 .

[14]  Shun Lien Chuang,et al.  Physics of Photonic Devices , 2009 .

[15]  Alex Zunger,et al.  Effects of interfacial atomic segregation on optical properties of InAs/GaSb superlattices , 2001 .

[16]  Martin Walther,et al.  Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors , 2005 .

[17]  Gregory C. Dente,et al.  Pseudopotential methods for superlattices: Applications to mid-infrared semiconductor lasers , 1999 .

[18]  Ron Kaspi,et al.  Spectral blueshift and improved luminescent properties with increasing GaSb layer thickness in InAs–GaSb type-II superlattices , 2001 .

[19]  Manijeh Razeghi,et al.  Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier , 2007 .