Transient RF signals during the switching of MESFET control devices

An analytical model that predicts the intrinsic small-signal switching transients for MESFET control devices is developed. Theoretical results for video-breakthrough and small-signal RF switching waveforms are in excellent agreement with measurements on many devices. Although the intrinsic transients are less than a few nanoseconds in duration, FET material aspects (such as surface states) can induce much longer transients. The 10-90% switching time, which is dominated by intrinsic effects, can be lowered by reducing gate length and gate bias resistance (the latter is more feasible with recently reported diode-gate FFTs). >

[1]  T. Sudo,et al.  A MESFET Variable-Capacitance Model for GaAs Integrated Circuit Simulation , 1982 .

[2]  R. J. Gutmann,et al.  Modeling and design of GaAs MESFET control devices for broad-band applications , 1990 .

[3]  Marc Rocchi,et al.  Status of the surface and bulk parasitic effects limiting the performances of GaAs IC's , 1985 .

[4]  N. Scheinberg,et al.  A monolithic DC-1.6 GHz digital attenuator , 1989, IEEE MTT-S International Microwave Symposium Digest.

[5]  R. Yeats,et al.  Gate slow transients in GaAs MESFETs-causes, cures, and impact on circuits , 1988, Technical Digest., International Electron Devices Meeting.

[6]  S. Blight,et al.  Surface influence on the conductance DLTS spectra of GaAs MESFET's , 1986, IEEE Transactions on Electron Devices.

[7]  W. Moroney,et al.  Low distortion GaAs MESFET control components for baseband applications , 1989, 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium.