Charge enhancement effect in NMOS bulk transistors induced by heavy ion Irradiation-comparison with SOI

This work investigates the charge collection mechanisms occurring in heavy ion irradiated metal oxide semiconductor (MOS) devices. The parasitic bipolar effect, inherent to the structure of SOI transistors, is shown to exist in bulk NMOS transistors as well. We experimentally show that the drain junction of an OFF-state bulk MOS transistor collects more charge than an identical junction isolated from neighboring elements. In other words, the proximity of the source junction and the triggering of the bipolar-like structure are responsible of charge amplification. A higher current peak on the drain is observed, and this enhancement effect is high enough to invalidate usual charge collection models based only on funnel and diffusion transport. Thus, the proximity of other junctions has to be considered to improve charge collection model in bulk technologies.

[1]  O. Faynot,et al.  Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations , 2002 .

[2]  R. R. O'Brien,et al.  A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices , 1981, IEEE Electron Device Letters.

[3]  Marty R. Shaneyfelt,et al.  Impact of technology trends on SEU in CMOS SRAMs , 1996 .

[4]  T. R. Oldham,et al.  Charge Funneling in N- and P-Type Si Substrates , 1982, IEEE Transactions on Nuclear Science.

[5]  C. Hu,et al.  Alpha-particle-induced field and enhanced collection of carriers , 1982, IEEE Electron Device Letters.

[6]  D. McMorrow,et al.  Ionization-induced carrier transport in InAlAs/InGaAs high electron mobility transistors , 2004, IEEE Transactions on Nuclear Science.

[7]  S. Watanabe,et al.  A 45 ns 16 Mb DRAM with triple-well structure , 1989, IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers.

[8]  Robert Ecoffet,et al.  Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations , 1999 .

[9]  H. Saito,et al.  Total-dose and single-event-upset (SEU) resistance in advanced SRAMs fabricated on SOI using 0.2 /spl mu/m design rules , 2001, 2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588).

[10]  Lloyd W. Massengill,et al.  Cosmic and terrestrial single-event radiation effects in dynamic random access memories , 1996 .

[11]  R. Koga,et al.  Heavy ion induced snapback in CMOS devices , 1989 .

[12]  Farokh Irom,et al.  Single-event upset in evolving commercial silicon-on-insulator microprocessor technologies , 2003 .

[13]  A. B. Campbell,et al.  Ion Track Shunt Effects in Multi-Junction Structures , 1985, IEEE Transactions on Nuclear Science.

[14]  S. Buchner,et al.  C ent Mechanisms of GaAs Field-Effect xperiment and Simulation , 1998 .

[15]  R. R. O'Brien,et al.  Collection of charge from alpha-particle tracks in silicon devices , 1983, IEEE Transactions on Electron Devices.

[16]  S. Kirkpatrick.  Modeling diffusion and collection of charge from ionizing radiation in silicon devices , 1979, IEEE Transactions on Electron Devices.

[17]  Lloyd W. Massengill,et al.  Cosmic and Terrestrial Single-Event Effects in Dynamic Random Access , 1996 .

[18]  Kenneth A. LaBel,et al.  Application of a diffusion model to SEE cross sections of modern devices [DRAMs] , 1995 .

[19]  Philippe Roche,et al.  Comparison of the sensitivity to heavy ions of 0.25-/spl mu/m bulk and SOI technologies , 2002 .

[20]  A. B. Campbell,et al.  Charge Collection in Multilayer Structures , 1984, IEEE Transactions on Nuclear Science.

[21]  J. Ziegler.  The stopping and range of ions in solids vol 1 : The stopping and ranges of ions in matter , 2013 .

[22]  A. H. Johnston,et al.  Single-event upset in commercial silicon-on-insulator PowerPC microprocessors , 2002, 2002 IEEE International SOI Conference.

[23]  Peter Meyer,et al.  Cosmic rays—astronomy with energetic particles , 1974 .

[24]  D. Schepis,et al.  Total-dose and SEU characterization of 0.25 micron CMOS/SOI integrated circuit memory technologies , 1997 .

[25]  D. S. Walsh,et al.  Single-event upset and snapback in silicon-on-insulator devices and integrated circuits , 2000 .

[26]  G. C. Messenger,et al.  Collection of Charge on Junction Nodes from Ion Tracks , 1982, IEEE Transactions on Nuclear Science.

[27]  M.M.R. Williams,et al.  The stopping and ranges of ions in matter , 1978 .

[29]  F. W. Sexton,et al.  Monte Carlo exploration of neutron-induced SEU-sensitive volumes in SRAMs , 2002 .

[30]  H. Saito,et al.  SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using a rad-hard circuit design , 2002 .

[31]  D. S. Walsh,et al.  Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics , 1999 .

[32]  H. Saito,et al.  Neutron-induced SEU in bulk and SOI SRAMS in terrestrial environment , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

[33]  L.W. Massengill,et al.  Single-event charge enhancement in SOI devices , 1990, IEEE Electron Device Letters.

[34]  Claude Marcandella,et al.  Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation , 2002 .

[35]  T. R. Oldham,et al.  Charge Collection Measurements for Heavy Ions Incident on n- and p-Type Silicon , 1983, IEEE Transactions on Nuclear Science.

[36]  A. Ochoa,et al.  Snap-Back: A Stable Regenerative Breakdown Mode of MOS Devices , 1983, IEEE Transactions on Nuclear Science.