GaAsSb-Based DHBTs With a Reduced Base Access Distance and $f_{\mathrm {T}}/f_{\mathrm {MAX}}=$ 503/780 GHz

We report InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with simultaneous current and power gain cutoff frequencies of fT/fMAX = 503/780 GHz. Devices with a 0.2 × 4.4 μm2 emitter area feature a peak DC current gain β = 17 and a common-emitter breakdown voltage BVCEO = 4.1 V. To the best of our knowledge, the present transistors are the first GaAsSb-based DHBTs to feature fMAX > 750 GHz. The progress in RF performance is enabled by a reduction of the base access resistance and base-collector capacitance achieved via an improved self-aligned emitter etching procedure.

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