Optimization of the MBE growth of Hg1-xCdxTe for advanced infrared applications

Hg1-xCdxTe films with x values varying from 0.2 to 0.23 have been grown and characterized. N-type carrier concentrations in the range of 1 X 1015 cm-3 to 3 X 1015 cm-3 have been obtained. Hall effect measurements before and after anneals at 250 degrees Celsius have led to the evaluation of the Hg vacancy concentration in the samples. Dislocation density less than 105 cm-2 and X-ray rocking curve width less than 25 arc- secs measured in some of the films attests to the excellent crystallinity of the material.