论文信息 - On the modulation phase efficiency of a silicon p-i-n diode optical modulator

On the modulation phase efficiency of a silicon p-i-n diode optical modulator

This paper highlights the study of carrier injection effect on silicon waveguide with p-i-n diode structure integrated on Silicon-on-Insulator (SOI). The device performance is predicted using 2D Silvaco CAD software under different applied voltages at wavelength 1.3 and 1.55 µm. Lπ and VπLπ is minimized at a greater applied voltage. Operating at 1.55 µm is proven to be more efficient in terms of length of the modulator, Lπ and modulation phase efficiency. At 0.75V, Lπ and VπLπ are 0.527711 cm and 0.39578 Vcm respectively. Meanwhile, at 1V, Lπ and VπLπ are 0.01303 cm and 0.013029Vcm respectively. Therefore, a greater voltage is suggested for a shorter device length and greater modulation efficiency.

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