Two-terminal millimeter-wave sources

Basic principles of operation, fundamental power-generation capabilities, and fabrication technologies are reviewed for three groups of two-terminal devices, i.e., resonant-tunneling diodes (RTDs), transferred-electron devices (TEDs), and transit-time diodes. The paper focuses on devices for frequencies above 30 GHz, and an overview of recent research in this area and of various state-of-the-art laboratory results is given. As an outlook, the potential of some new material systems for high-power devices is discussed.

[1]  K. Kurokawa,et al.  Noise in Synchronized Oscillators , 1968 .

[2]  Jim Crowley,et al.  "Basics And Recent Applications Of High Efficiency Millimeter Wave InP Gunn Diodes" , 1989, Other Conferences.

[3]  R. Blundell,et al.  Resonant tunnelling diode oscillator as an alternative LO for SIS receiver applications , 1993 .

[4]  F. Schäffler,et al.  D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz , 1996 .

[5]  G. I. Haddad,et al.  GaAs single-drift flat-profile IMPATT diodes for CW operation at D band , 1992 .

[6]  Heribert Eisele,et al.  Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks , 1989 .

[7]  Y. E. Ma Millimeter-Wave Active Solid-State Devices , 1985, Other Conferences.

[8]  Lothar Wandinger,et al.  mm-wave InP Gunn devices - Status and trends , 1981 .

[9]  G. I. Haddad,et al.  Efficient power combining with D-band (110-170 GHz) InP Gunn devices in fundamental-mode operation , 1998 .

[10]  K.H.G. Duh,et al.  A 560 mW, 21% power-added efficiency V-band MMIC power amplifier , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[11]  S. Weinreb,et al.  Full-waveguide band, 90 to 140 GHz, MMIC amplifier module , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[12]  T. C. McGill,et al.  Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes , 1991 .

[13]  Elliott R. Brown,et al.  5 mW parallel-connected resonant-tunnelling diode oscillator , 1992 .

[14]  B. Bayraktaroglu,et al.  Integral packaging for millimetre-wave GaAs IMPATT diodes prepared by molecular beam epitaxy , 1983 .

[15]  A. Rydberg,et al.  High efficiency and output power from second- and third-harmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHz , 1990, IEEE Electron Device Letters.

[16]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[17]  G. I. Haddad,et al.  High-performance InP Gunn devices for fundamental-mode operation in D-band (110-170 GHz) , 1995 .

[18]  J. Freyer,et al.  140 GHz GaAs double-Read IMPATT diodes , 1995 .

[19]  C. D. Parker,et al.  A quasioptical resonant-tunneling-diode oscillator operating above 200 GHz , 1993 .

[20]  Tadao Ishibashi,et al.  C.W. oscillation with p+-p-n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands , 1976 .

[21]  J.-F. Luy,et al.  Si/SiGe MMIC's , 1995 .

[22]  G. S. Dow,et al.  A 94-GHz 0.35-W power amplifier module , 1997 .

[23]  S. Chu,et al.  GaAs IMPATT diodes for 60 GHz , 1984, IEEE Electron Device Letters.

[24]  S.J.J. Teng,et al.  High-performance second-harmonic operation W-band GaAs Gunn diodes , 1989, IEEE Electron Device Letters.

[25]  S. Luryi,et al.  -1 - Chapter 5. Quantum-effect and Hot-electron Devices , 2022 .

[26]  Heribert Eisele,et al.  D-band InP Gunn devices with second-harmonic power extraction up to 290 GHz , 1994 .

[27]  G. Haddad,et al.  Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies , 1993 .

[28]  D. Yamauchi,et al.  60 GHz high-efficiency HEMT MMIC chip set development for high-power solid state power amplifier , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[29]  G. Haddad,et al.  The potential of InP IMPATT diodes as high-power millimeter-wave sources: First experimental results , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[30]  M. Reddy,et al.  Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz , 1997, IEEE Electron Device Letters.

[31]  R. Lai,et al.  A 155-GHz monolithic InP-based HEMT amplifier , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[32]  S. M. Sze Physics of semiconductor devices /2nd edition/ , 1981 .

[33]  Cheng Sun,et al.  Millimeter-Wave Power-Combining Techniques , 1983 .