High switching frequency performance of E-GaN FETs and silicon MOSFETs

This paper aims at achieving the following objectives: (a) evaluate and compare the power loss during switching transitions in the gallium nitride (GaN) FETs and silicon (Si) MOSFETs, (b) determine the frequency capability of the GaN and Si transistors, when used in hard-switching power electronic circuits, and (c) evaluate the power-performance of the synchronous buck (SB) dc-dc power converters employing GaN and Si transistors operating at different switching frequencies. The GaN transistors in EPC9037 switching network module are considered as the benchmark devices and their properties are compared with the silicon n-channel transistors with identical voltage and current ratings. Simulation results are provided for the SB converter illustrating the switching frequency limitation of the Si MOSFETs and the extended frequency capability of GaN FETS. Experimental results are provided to validate the analytical predictions.