Quantitative effects of electrical and vibrational stresses on reliability
暂无分享,去创建一个
This article presents some details on how electrical and vibrational stresses exacerbate failures. This is one of a series of articles on similar subjects by this author. One electrical defect type is pin-holes in oxide layers in ICs. Electrical leakage current through a low insulation pin-hole could cause temperature rise and ultimately, when electrons of sufficient energy causing an avalanche, a thermal runaway condition could develop and maintain an electrical short. On the other hand electromigration could cause conductor opens. Aircraft data indicated that vibration related failures constituted more than 14 per cent of the total number of field failures. Fatigue failures can be directly related to S/N curves of stress to number of cycles to failure. Some measurements indicated that for a particular piece of equipment tested the time to failure varied inversely as the fourth power of vibrational acceleration; and failures of specific groups of component part types were sensitive to particular vibrational acceleration levels. Much information exists that gives quantitative measures on how stresses exacerbate failures. However, there is still a big gap in the relationship between the engineering fundamentals and the failures experienced. The author urges the readers to join force to develop a new reliability engineering foundation based on relationships of defects, failure mechanisms and stresses from which future reliability predictions and reliability analyses can be conducted.
[1] A. Jonscher. Electronic Conduction in Dielectric Films , 1969 .
[2] J. Black. Physics of Electromigration , 1974 .
[3] John J. Bart. Electron Beam Microanalysis of Electrochemical Attack on Thin Film Nickel-Chromium Resistors , 1973 .
[4] Kam L Wong. The common thread for operational reliability and failure physics , 1982 .