High Mobility III-V MOSFETs For RF and Digital Applications
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A. Asenov | P. Fejes | X. Li | M. Tutt | M. Passlack | J. Abrokwah | A. Zlotnicka | K. Kalna | O. Hartin | S. Thorns | P. Zurcher | M. Tutt | A. Asenov | I. Thayne | K. Kalna | D. Macintyre | M. Passlack | R. Droopad | Y.-B. Park | Haiping Zhou | R. Hill | D. Moran | P. Zurcher | K. Rajagopalan | J. Abrokwah | O. Hartin | X. Li | P. Fejes | K. Rajagopalan | E. Johnson | A. Zlotnicka | R. Droopad | E. Johnson | H. Zhou | I.G. Thayne | D.A.J. Moran | R.J.W. Hill | H. Zhou | Y.-B. Park | D. Macintyre | S. Thorns | K. Kalna | Asen Asenov | Ravi Droopad | Peter Fejes | Richard Hill | David A. J. Moran | Xu Li
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