Design of Low Noise Dualband CMOS RF Front-end for IEEE 802.11n

A dualband low noise RF front-end is designed in 0.18um CMOS technology. The operation frequency is selected by turning on and off the switched inductor and capacitor. By using the self-matched capacitor, simultaneous input and noise matching can be easily achieved in 2 ㎓ and 5 ㎓ band. Proposed RF front-end has the good performances because self-matched capacitor helps reducing the number of switchable components which can cause the noise and loss in circuit.

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