论文信息 - Origin of the charge to breakdown distributions in thin silicon dioxide films

Origin of the charge to breakdown distributions in thin silicon dioxide films

This letter shows that in thin silicon dioxide films the charge to breakdown distribution can have two origins. It can be related to the oxide thickness variation across the wafer or to the statistical nature of the breakdown event. The oxide nonuniformity is a major factor in the case of stress-induced-bulk-charge enhanced breakdown.

S. Okhonin | P. Fazan | S. Okhonin | P. Fazan

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