소스축퇴를 혼합하여 선형성을 개선시킨 차동 트랜스컨덕턴스 증폭기

Linearity improvement technique of transconductor is presented in the paper. In order to certify the linearity improvement of proposed transconductor, the 3rd-order Elliptic low-pass Gm-C filter which provides 5MHz cutoff is implemented by using the transconductor. According to the ⅡP3 measurement result of filters, proposed filter has higher ⅡP3 than normal source-degeneration filter; the In-band IIP3 of proposed and normal filter are 10.1 ㏈m and 7.5 dBm respectively. The filter is fabricated in 1P6M 0.18- ㎛ CMOS while consuming the 3.3㎽ with 1.8 Vdd. The in-band input-referred noise voltage is 62.3 μVrms and the SFDR is 54.1 ㏈.