Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS

High-quality epitaxial films of LaCuOS, a wide-gap p-type semiconductor, are grown on yittria-stabilized-zirconia (001) or MgO (001) single-crystal substrates by a unique method. Postannealing of a bilayer film composed of an extremely thin metallic copper layer and an amorphous LaCuOS layer at 1000 °C results in an epitaxially grown LaCuOS thin film. This thin copper layer with high orientation, which likely acts as an epitaxial initiator, is essential for epitaxial growth. The resulting epitaxial films exhibit relatively intense ultraviolet emission associated with excitons at room temperature, confirming the high crystal quality of the films.

[1]  G. Hubler,et al.  Pulsed Laser Deposition of Thin Films , 2003, Handbook of Laser Technology and Applications.

[2]  H. Ohta,et al.  Preparation of transparent p-type (La1−xSrxO)CuS thin films by r.f. sputtering technique , 2002 .

[3]  H. Hosono,et al.  Electrical conductivity control in transparent p-type (LaO)CuS thin films prepared by rf sputtering , 2002 .

[4]  H. Hosono,et al.  Electronic structure of the transparent p -type semiconductor (LaO)CuS , 2001 .

[5]  H. Ohta,et al.  Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO , 2001 .

[6]  H. Hosono,et al.  Room-temperature excitons in wide-gap layered-oxysulfide semiconductor: LaCuOS , 2001 .

[7]  H. Ohta,et al.  Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition , 2001 .

[8]  H. Hosono,et al.  Transparent p-type semiconductor: LaCuOS layered oxysulfide , 2000 .

[9]  K. Kawamura,et al.  Current injection emission from a transparent p-n junction composed of p-SrCu~2O~2/n-ZnO , 2000 .

[10]  J. Hartmann,et al.  Gas-source molecular beam epitaxy of SiGe virtual substrates: II. Strain relaxation and surface morphology , 2000 .

[11]  P. Parilla,et al.  Thin Film Growth of Transparent p‐type CuAlO2 , 1999 .

[12]  Isamu Akasaki,et al.  Optical Investigations of AlGaN on GaN Epitaxial Films , 1999 .

[13]  John E. Bowers,et al.  Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth , 1999 .

[14]  S. Nakamura,et al.  Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer , 1996 .

[15]  Wei Wang,et al.  GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source , 1995 .

[16]  R. Powell,et al.  Growth of GaN(0001)1×1 on Al2O3(0001) by gas‐source molecular beam epitaxy , 1992 .