A new Integrated MOS-GCT Structure with Dual Gate
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A integrated MOS-GCT structure with dual gate is proposed based on the conventional A-GCT in this paper, which turns on by a positive current pulse applied to the conventional on-gate, and turns off by the negative voltage pulse applied to gate of pMOS integrated into p base region of A-GCT. The structural feature and operation principle is anazyed and compared with the conventional A-GCT. And the dynamic characteristic and commutation mechanism are studied by the commercial ISE-TCAD simulator. The results show that the monolithic integration of MOS and GCT can successfully achieve the internal commutation.
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