Contribution of low-energy (≪ 10 MeV) neutrons to upset rate in a 65 nm SRAM

Predictions of single and multiple cell upsets in a 65 nm bulk CMOS SRAM are presented for the low-energy (≪ 10 MeV) portion of the NYC neutron spectrum. Scattering is identified as a significant nuclear mechanism for this regime and the consequence for multiple bit upset is discussed. The contribution is compared to the full spectrum.

[1]  Philip R. Page,et al.  ENDF/B-VII.0: Next Generation Evaluated Nuclear Data Library for Nuclear Science and Technology , 2006 .

[2]  F. Saigne,et al.  Neutron-induced SEU in bulk SRAMs in terrestrial environment: Simulations and experiments , 2004, IEEE Transactions on Nuclear Science.

[3]  M.E. Porter,et al.  Predicting neutron induced soft error rates: Evaluation of accelerated ground based test methods , 2008, 2008 IEEE International Reliability Physics Symposium.

[4]  P. Marshall,et al.  Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM , 2008, IEEE Transactions on Nuclear Science.

[5]  I. Ogawa,et al.  Influence of Elastic Scattering on the Neutron-Induced Single-Event Upsets in a Static Random Access Memory , 2004 .

[6]  P. Paillet,et al.  Single Event Upsets Induced by 1–10 MeV Neutrons in Static-RAMs Using Mono-Energetic Neutron Sources , 2007, IEEE Transactions on Nuclear Science.

[7]  R.A. Reed,et al.  Predicting Thermal Neutron-Induced Soft Errors in Static Memories Using TCAD and Physics-Based Monte Carlo Simulation Tools , 2007, IEEE Electron Device Letters.

[8]  peixiong zhao,et al.  Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions , 2009, IEEE Transactions on Nuclear Science.

[9]  J. Pontcharra,et al.  SEU sensitivity of bulk and SOI technologies to 14-MeV neutrons , 2002 .

[10]  H.H.K. Tang,et al.  Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells , 2007, IEEE Transactions on Nuclear Science.

[11]  H. Kameyama,et al.  Threshold energy of neutron-induced single event upset as a critical factor , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

[12]  peixiong zhao,et al.  Monte Carlo Simulation of Single Event Effects , 2010, IEEE Transactions on Nuclear Science.