论文信息 - Chemical etching control during the self-limitation process by boron diffusion in silicon: Analytical results

Chemical etching control during the self-limitation process by boron diffusion in silicon: Analytical results

The authors present an analytical model including the influence of the highly-doped silicon layer and of the intrinsic boron diffusion region on the chemical etching rate and on the chemical etching time, allowing one to control the self-limitation chemical etching process to obtain silicon micromechanical elements.

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