论文信息 - Ultrathin pseudomorphic Sn/Si and SnxSi1−x/Si heterostructures

Ultrathin pseudomorphic Sn/Si and SnxSi1−x/Si heterostructures

Ultrathin, coherently strained Sn/Si and SnxSi1–x/Si alloy quantum well structures with substitutional Sn incorporation far in excess of the equilibrium solubility limit have been fabricated via substrate temperature and growth flux modulations in molecular beam epitaxy. Sn/Si single and multiple quantum wells with Sn coverage up to 1.3 ML, Sn0.05Si0.95/Si multiple quantum wells of up to 2.0 nm, and Sn0.16Si0.84/Si multiple quantum wells of up to 1.1 nm are determined to be pseudomorphic, and coverage-dependent Sn segregation dynamics are observed.

H. Atwater | K. S. Min

[1] Harry A. Atwater,et al. INTERBAND TRANSITIONS IN SNXGE1-X ALLOYS , 1997 .

[2] Paul R. Berger,et al. Band‐edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy , 1996 .

[3] A. Larsen,et al. Pseudomorphic Si1−xSnx alloy films grown by molecular beam epitaxy on Si , 1995 .

[4] H. Atwater,et al. Epitaxial Growth of Metastable Sn χ Ge 1-χ Alloy Films by Ion-Assisted Molecular Beam Epitaxy , 1994 .

[5] G. Abstreiter,et al. Fabrication and properties of epitaxially stabilized Ge/α-Sn heterostructures on Ge(001) , 1992 .

[6] B. I. Craig. The thickness dependence of the band gap of α-Sn films , 1992 .

[7] Quate,et al. Tin-induced reconstructions of the Si(100) surface. , 1991, Physical review. B, Condensed matter.

[8] R. Soref,et al. PREDICTED BAND GAP OF THE NEW SEMICONDUCTOR SIGESN , 1991 .

[9] Eaglesham,et al. Limiting thickness hepi for epitaxial growth and room-temperature Si growth on Si(100). , 1990, Physical review letters.

[10] H. Reisinger,et al. Growth and characterization of a delta‐function doping layer in Si , 1987 .

[11] S. Groves,et al. BAND STRUCTURE OF GRAY TIN , 1963 .

[12] C. Isenberg,et al. On the temperature-dependence of the distribution coefficient: The solid solubilities of tin in silicon and germanium , 1959 .