论文信息 - A biased percolation model for the analysis of electronic-device degradation

A biased percolation model for the analysis of electronic-device degradation

The biased percolation model is proposed for investigating device degradation and failure associated with the generation of defects due to local Joule heating. The degradation process of a thin film is monitored by the evolution of damage pattern, current distribution, macroscopic sample resistance and its fluctuations, defect concentration and device lifetime. The conductor-insulator (CI) and conductor-superconductor (CS) like degradation processes are considered. The results can be used to propose non-destructive indicators for testing the reliability of samples and to interpret experiments.

[1] Y. Z. Xu,et al. Electrical measurements as early indicators of electromigration failure , 1995 .

[2] Lode K. J. Vandamme,et al. Noise as a diagnostic tool for quality and reliability of electronic devices , 1994 .

[3] Zoltan Gingl,et al. Biased percolation and abrupt failure of electronic devices , 1996 .

[4] Fausto Fantini,et al. Electromigration in thin-films for microelectronics , 1993 .

[5] O. Nur,et al. 1/f noise characterization of Ir/p‐Si and Ir/p‐Si1−xGex low Schottky barrier junctions , 1996 .

[6] Y. Z. Xu,et al. Measurement of the electrical properties of electromigration specimens , 1995 .

[7] M. Leys,et al. A study of 1/f noise in InP grown by CBE , 1996 .

[8] Tsong-Ming Chen,et al. Electrical noise and VLSI interconnect reliability , 1994 .

[9] Rammal,et al. Flicker (1/f) noise in percolation networks: A new hierarchy of exponents. , 1985, Physical review letters.

[10] Viktor Krozer,et al. Characterisation of reliability of compound semiconductor devices using electrical pulses , 1996 .

[11] Hermann Stoll,et al. 1/f noise as an early indicator of electromigration damage in thin metal films , 1996 .