A 2 Mbit Radiation Hardened Stackable Ferroelectric Memory

A radiation hardened, high-performance, ferroelectric memory (FeRAM) with 2 Mb density has been designed to yield radiation characteristics useful for many satellite and space applications. The ferroelectric capacitor for each memory cell is inherently resistant to both TID and SEU effects. A design approach employing a radiation tolerant memory architecture and hardened-by-design (HBD) techniques were used for the remaining CMOS circuitry. A number of these prototype memory integrated circuits were fabricated, packaged and then electrically tested before and after irradiation. Plans have been developed, including a stacked packaging approach, for the final production version of a compact, 16 Mbit radiation hardened, nonvolatile ferroelectric memory component.